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Zinc oxide/titanium oxide double-layer nanorod array heterojunction structure and preparation method thereof

A nanorod array, titanium oxide technology, applied in nanotechnology, nanotechnology, semiconductor/solid-state device manufacturing, etc., to achieve the effects of good structural consistency, enhanced light scattering, and highly ordered orientation

Pending Publication Date: 2021-03-16
HUBEI UNIV OF ARTS & SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the existing technologies focus on the preparation of a heterojunction composite structure of a one-dimensional zinc oxide nanorod array and a two-dimensional titanium dioxide film. Related Reports of Layered Nanorod Array Heterojunction Composite Structures

Method used

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  • Zinc oxide/titanium oxide double-layer nanorod array heterojunction structure and preparation method thereof
  • Zinc oxide/titanium oxide double-layer nanorod array heterojunction structure and preparation method thereof
  • Zinc oxide/titanium oxide double-layer nanorod array heterojunction structure and preparation method thereof

Examples

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Effect test

Embodiment 1

[0039] A zinc oxide / titanium oxide double-layer nanorod array heterojunction structure, the preparation of which comprises the following steps:

[0040] 1) With the cleaned FTO conductive glass as the substrate, TiO is sputtered on the substrate by radio frequency magnetron sputtering 2 Nanocrystalline seed layer film;

[0041]2), grow TiO in step 1) 2 Nanocrystalline seed layer film of FTO conductive glass into TiO 2 The hydrothermal reaction was carried out in the precursor solution (the hydrothermal reaction temperature was 160°C, and the hydrothermal reaction time was 4h), so that the TiO 2 Growth of TiO on Nanocrystalline Seed Layer Thin Films 2 nanorod arrays;

[0042] 3), with TiO grown in step 2) 2 The FTO conductive glass of the nanorod array was used as the substrate, and the TiO 2 The top of the nanorod array was deposited to obtain ZnO nanoparticles, and after the sputtering was completed, the FTO conductive glass was annealed in air at 450°C for 60min, there...

Embodiment 2

[0053] A zinc oxide / titanium oxide double-layer nanorod array heterojunction structure, the preparation of which comprises the following steps:

[0054] 1) With the cleaned FTO conductive glass as the substrate, TiO is sputtered on the substrate by radio frequency magnetron sputtering 2 Nanocrystalline seed layer film;

[0055] 2), grow TiO in step 1) 2 Nanocrystalline seed layer film of FTO conductive glass into TiO 2 The hydrothermal reaction was carried out in the precursor solution (the hydrothermal reaction temperature was 160°C, and the hydrothermal reaction time was 7h), so that the TiO 2 Growth of TiO on Nanocrystalline Seed Layer Thin Films 2 nanorod arrays;

[0056] 3), with TiO grown in step 2) 2 The FTO conductive glass of the nanorod array was used as the substrate, and the TiO 2 The top of the nanorod array was deposited to obtain ZnO nanoparticles, and after the sputtering was completed, the FTO conductive glass was annealed in air at 450°C for 60min, ther...

Embodiment 3

[0061] A zinc oxide / titanium oxide double-layer nanorod array heterojunction structure, the preparation of which comprises the following steps:

[0062] 1) With the cleaned FTO conductive glass as the substrate, TiO is sputtered on the substrate by radio frequency magnetron sputtering 2 Nanocrystalline seed layer film;

[0063] 2), grow TiO in step 1) 2 Nanocrystalline seed layer film of FTO conductive glass into TiO 2 The hydrothermal reaction was carried out in the precursor solution (the hydrothermal reaction temperature was 160°C, and the hydrothermal reaction time was 10h), so that the TiO 2 Growth of TiO on Nanocrystalline Seed Layer Thin Films 2 nanorod arrays;

[0064] 3), with TiO grown in step 2) 2 The FTO conductive glass of the nanorod array was used as the substrate, and the TiO 2 The top of the nanorod array was deposited to obtain ZnO nanoparticles, and after the sputtering was completed, the FTO conductive glass was annealed in air at 450°C for 60min, the...

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Abstract

The invention relates to a zinc oxide / titanium oxide double-layer nanorod array heterojunction structure and a preparation method thereof. According to the preparation method, sputtering parameters are optimized, ZnO nano-particles are obtained through deposition on the top of each nano-rod in a TiO2 nano-rod array, the ZnO nano-particles are used as seed crystals to grow on the tops of the TiO2 nano-rods again through a hydrothermal method to obtain ZnO nano-rods, and finally the ZnO nano-rods are cleaned and annealed. Therefore, a double-layer nanorod array heterojunction composite structurewith the one-dimensional zinc oxide nanorod array and the one-dimensional titanium dioxide nanorod array can be obtained. According to the preparation method, due to the existence of the ZnO seed crystal particles, the subsequent ZnO nanorods can continuously grow along the growth direction of the TiO2 nanorods, so that the finally grown two-layer nanorod array has the advantages of good structural consistency and highly ordered orientation due to the fact that the two-layer nanorod array grows perpendicular to the substrate.

Description

technical field [0001] The invention relates to the technical field of material preparation, in particular to a zinc oxide / titanium oxide double-layer nanorod array heterojunction structure and a preparation method thereof. Background technique [0002] Titanium dioxide (TiO 2 ) and zinc oxide (ZnO) materials have excellent photoelectric properties, good environmental compatibility, and low cost, and have important applications in the fields of photoelectrocatalysis, photoelectric conversion, and biosensing. [0003] In recent years, TiO with a one-dimensional single-crystal nanorod array structure 2 And ZnO nanomaterials have received extensive attention, and their one-dimensional single-crystal structure can provide a direct channel for photoelectron transport, thereby reducing the recombination probability and improving the electron transport efficiency, so as to ultimately enhance the optoelectronic properties of the material. However, for the nanorod array structure o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02B82Y30/00B82Y40/00C23C14/08C23C14/35C23C14/58
CPCH01L21/02565H01L21/02554H01L21/02631H01L21/02603H01L21/02601H01L21/02664B82Y30/00B82Y40/00C23C14/083C23C14/086C23C14/35C23C14/5806
Inventor 汪竞阳何子越梁桂杰李望南王松钟志成屈少华
Owner HUBEI UNIV OF ARTS & SCI
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