Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Current biasing circuit for fast wake-up of the chip

A technology of current bias and bias current, which is applied in the direction of adjusting electrical variables, instruments, control/regulation systems, etc., and can solve problems such as long chip wake-up time

Active Publication Date: 2022-05-13
BEIJING SMARTCHIP MICROELECTRONICS TECH COMPANY +3
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a current bias circuit for quickly waking up the chip to quickly start the key circuits in the chip, thereby solving the problem of long wake-up time of the chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Current biasing circuit for fast wake-up of the chip
  • Current biasing circuit for fast wake-up of the chip
  • Current biasing circuit for fast wake-up of the chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0020] In the embodiments of the present invention, the terms "first", "second", "third", "fourth" and so on are only used for distinguishing descriptions, and should not be understood as indicating or implying relative importance.

[0021] figure 1 It is a circuit diagram of an existing current bias circuit in a normal working state. Such as figure 1 As shown, the existing current bias circuit includes a bias current generating circuit, a low-precision bias current generating circuit and a current output branch. The bias current generation circuit includes: a first PMOS transistor Mp1, a second PMOS transistor Mp2, a first NMOS transistor Mn1, a second NMOS ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a current bias circuit for quickly waking up a chip, which belongs to the technical field of integrated circuits. The current bias circuit includes a bias current generating circuit, a low-precision bias current generating circuit, and a current output branch, and also includes an additional switch circuit; the additional switch circuit is arranged between the bias current generating circuit and the current Between the output branches, it is used to pull down the potential of the operating point of the current output branch instantaneously during the process of the current bias circuit from being turned off to on, so as to quickly open the current output branch to output the Bias current generating circuit generates bias current. The present invention pulls down the potential of the working point of the current output branch instantaneously through an additional switch circuit in the process of the current bias circuit from being turned off to on, so as to quickly open the current output branch to output the bias current, thereby quickly starting the chip All kinds of key circuits can wake up the chip quickly, which solves the problem of long wake-up time of the chip.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a current bias circuit for quickly waking up a chip. Background technique [0002] Most chips used in the Internet of Things, industrial control, communication and other fields need to have multiple working modes to meet the low power consumption requirements in battery-powered and wireless power supply scenarios. Most of the time the chip is in sleep mode, and most circuits in the chip are turned off to reduce power consumption and loss. When the chip is triggered by a wake-up source, it enters the normal working state, and re-enters the sleep state after completing related tasks to save power consumption. When the chip wakes up, its internal voltage reference, oscillator circuit, clock circuit, phase-locked loop and other high-precision circuits need accurate bias current when starting from the off state, and the bias circuit that generates the bias current also ne...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/56
CPCG05F1/56
Inventor 胡毅唐晓柯王于波侯佳力冯文楠张帆
Owner BEIJING SMARTCHIP MICROELECTRONICS TECH COMPANY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products