Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of X-band ultra-wideband electronically controlled active frequency selective surface based on pin diode and its processing and testing method

A PIN diode and frequency selective surface technology, applied in the field of radar, can solve the problems of single function of the radome, non-adjustable working state, narrow transmission bandwidth, etc., and achieve a compact direct current feeding structure, good polarization stability, and widen transmission bandwidth Effect

Active Publication Date: 2022-07-12
HARBIN INST OF TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the continuous development of technology in the fields of military, industry, and communication in our country, the radome made of traditional passive frequency selective surface (Frequency Selective Surface, FSS) has been unable to adapt to flexible and changeable materials due to its single function and non-adjustable working status. various application scenarios
Compared with the electronically controlled active frequency selective surface (Active Frequency Selective Surface, AFSS) designed in the present invention, the defects of the traditional passive frequency selective surface scheme are as follows: (1) the working state is fixed and the function is single; (2) the transmission bandwidth Narrow, unable to meet ultra-broadband applications; (3) Poor oblique incidence stability, unable to guarantee normal operation under large-angle oblique incidence; (4) Poor polarization stability, unable to achieve dual-polarization work

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of X-band ultra-wideband electronically controlled active frequency selective surface based on pin diode and its processing and testing method
  • A kind of X-band ultra-wideband electronically controlled active frequency selective surface based on pin diode and its processing and testing method
  • A kind of X-band ultra-wideband electronically controlled active frequency selective surface based on pin diode and its processing and testing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] An X-band ultra-wideband electronically controlled active frequency selective surface based on a PIN diode, the electronically controlled active frequency selective surface unit includes a 3-layer metal plate unit and a 2-layer dielectric plate unit, the 3-layer metal plate unit and 2 The layer dielectric plate units are arranged at intervals, a circular gap is arranged in the center of the middle layer metal plate unit, the upper layer metal plate unit is attached to the upper layer dielectric plate unit, the bottom layer metal plate unit is attached to the lower layer dielectric plate unit, and the vertical direction of the upper layer metal plate unit is A patch slot is arranged, an interdigital capacitor slot is arranged in the lateral direction of the upper metal plate unit, and a square slot is arranged in the center of the upper metal plate unit;

[0050]The upper layer metal plate unit has the same structure as the bottom layer metal plate unit, and the bottom la...

Embodiment 2

[0074] The structure of the electronically controlled active frequency selective surface element is as follows figure 1 As shown, the structure is composed of 3 layers of metal and 2 layers of dielectric. The upper and lower metal layers are mainly square patch structures, and the middle layer metal is a circular slot structure. The dielectric plate material is RogersRT5880, and the relative permittivity ε r is 2.2, and the thickness h of each dielectric plate is 0.508mm. The structure of each layer of metal units is as follows figure 2 As shown in the figure, the metal unit structures of the top layer and the bottom layer are exactly the same, except that they are rotated 90 degrees, and the directions of the PIN diodes loaded on the top layer and the bottom layer are perpendicular to each other. The values ​​of each parameter in the figure are shown in Table 1.

[0075] Table 1 Structural parameters of electronically controlled active frequency selective surface elements ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
widthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an X-band ultra-wideband electronically controlled active frequency selection surface based on a PIN diode and a processing and testing method thereof. The 3-layer metal plate unit and the 2-layer dielectric plate unit are arranged at intervals, a circular gap is arranged in the center of the middle layer metal plate unit, the upper layer metal plate unit is attached to the upper layer dielectric plate unit, and the bottom layer metal plate unit is attached to the lower layer dielectric plate unit, The upper layer metal plate unit is provided with a patch slot horizontally, the upper layer metal plate unit is vertically arranged with an interdigital capacitor gap, and the center of the upper layer metal plate unit is provided with a square gap; the upper layer metal plate unit and the bottom metal plate The unit structure is the same, the bottom metal plate unit is rotated 90 degrees relative to the upper metal plate unit; the PIN diode is vertically arranged on the patch gap. It can adjust its own performance in real time according to the working state of the antenna system.

Description

technical field [0001] The invention belongs to the field of radar, and in particular relates to an X-band ultra-wideband electronically controlled active frequency selective surface based on a PIN diode and a processing and testing method thereof. Background technique [0002] With the continuous development of technology in my country's military, industry, communications and other fields, the radome made of traditional passive frequency selective surface (FSS) has been unable to adapt to flexible changes due to its single function and unadjustable working state. various application scenarios. Compared with the electronically controlled active frequency selective surface (Active Frequency Selective Surface, AFSS) designed in the present invention, the defects of the traditional passive frequency selective surface scheme are as follows: (1) fixed working state and single function; (2) transmission bandwidth It is narrow and cannot meet ultra-broadband applications; (3) the s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01Q15/00
CPCH01Q15/002H01Q15/0026
Inventor 傅佳辉赵宇霖王哲飞陈晚张群豪吕博
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products