Uniform flow heat insulation device of graphene film growth equipment

Abstract

The invention discloses a uniform flow heat insulation device of graphene film growth equipment. The uniform flow heat insulation device comprises a growth box; the side wall of one side of the growthbox is fixedly communicated with a uniform flow cylinder; a uniform flow mechanism is arranged in the uniform flow cylinder; an observation mechanism is arranged on the side wall of the upper end ofthe uniform flow cylinder; a first steering mechanism and a second steering mechanism are arranged in the uniform flow cylinder; and an air inlet pipe is fixedly communicated with the upper end side wall of the uniform flow cylinder. According to the uniform flow heat insulation device, a driving shaft is driven by an arranged motor to rotate; a first circular plate is driven by the driving shaftto rotate forwards; a first bevel gear is driven by the first circular plate to rotate; a third bevel gear is driven by the first bevel gear through a second bevel gear to rotate; a second circular plate is driven by the third bevel gear to rotate reversely; and after gas enters the uniform flow cylinder, the gas flowing through through holes in the surfaces of the first circular plate, the secondcircular plate and the third circular plate which rotate in a staggered manner is uniformly dispersed, so that the influence on the quality of a graphene film generated on the surface of a copper foil is prevented.

Description

technical field [0001] The invention relates to a uniform flow heat insulation device, in particular to a uniform flow heat insulation device of graphene film growth equipment, and belongs to the technical field of graphene film production. Background technique [0002] The growth of graphene film needs to be carried out in a high temperature environment. When the copper foil is heated above 13655, the methane pyrolyzes to form carbon atoms and hydrogen, and the carbon atoms crystallize on the copper surface to form graphene. Hydrogen can protect copper and remove oxides on the copper surface, which in turn requires high temperature and the introduction of methane gas and hydrogen during the growth of graphene films. [0003] When feeding methane gas and hydrogen gas into the graphene film growth chamber, the distribution of methane gas and hydrogen gas will affect the graphene film formed on the copper foil surface, while the existing gas pipeline is feeding gas into the gr...

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Problems solved by technology

[0003] When feeding methane gas and hydrogen gas into the graphene film growth chamber, the distribution of methane gas and hydrogen gas will affect the graphene film formed on the copper foil surface, while the existing gas pipeline is feeding gas into the growth chamber At the same time, the gas is evenly distributed through the flow equalizing heat shield, but the position of the vent holes of the existing flow equalizing heat shield is fixed, so that the gas passing into the growth box still drifts along a fixed trajectory, so that the gas cannot reach Better uniform flow thought, and then have an impact on the quality of graphene film formed on the surface of copper foil

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