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Liquid suction device for single crystal furnace and control method of liquid suction device

The technology of a suction device and a control method is applied in the field of liquid suction device of a single crystal furnace, which can solve the problems of production stop and high production cost, and achieve the effects of realizing heat balance, simple structure and reducing temperature difference.

Inactive Publication Date: 2021-02-09
徐州晶睿半导体装备科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

And when the concentration of pollutants reaches a certain critical value, the continued increase of pollutants may cause production to stop, resulting in higher production costs

Method used

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  • Liquid suction device for single crystal furnace and control method of liquid suction device
  • Liquid suction device for single crystal furnace and control method of liquid suction device
  • Liquid suction device for single crystal furnace and control method of liquid suction device

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Embodiment Construction

[0039] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0040] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself...

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Abstract

The invention discloses a liquid suction device for a single crystal furnace and a control method of the liquid suction device, the single crystal furnace is provided with a crystal growth chamber anda crystal pulling chamber, the crystal pulling chamber is communicated with the crystal growth chamber through a communication port, the liquid suction device comprises a storage container, a suctionpipe and a suction assembly, and the storage container is suitable for being arranged in the crystal pulling chamber. A storage space is defined in the storage container, a liquid inlet and an air vent are formed in the storage container, the liquid inlet and the air vent are respectively communicated with the storage space, the suction pipe is arranged on the storage container, a suction channelis defined in the suction pipe, the suction channel is communicated with the liquid inlet, and the suction pipe is suitable for extending into the crystal growth chamber through the communication port. The suction assembly is communicated with the air vent to reduce the pressure in the storage space. According to the liquid suction device for the single crystal furnace, polluted liquid in the crucible can be removed in time, continuous production is guaranteed, and the liquid suction device is simple in structure and reliable in use.

Description

technical field [0001] The invention relates to the technical field of crystal growth technology, in particular to a liquid suction device for a single crystal furnace and a control method for the liquid suction device. Background technique [0002] The vast majority of existing semiconductor monocrystalline silicon wafers are produced according to the Chowklarsky pull method, which involves melting polycrystalline silicon particles in a crucible and immersing the monocrystalline silicon seed crystal in molten silicon (or silicon solution) . As the seed begins to melt, the seed is slowly extracted from the molten silicon at a predetermined rate, which allows the seed to grow into a monocrystalline silicon ingot; once the ingot reaches the desired size, the ingot is removed. [0003] In order to save cost and increase production rate, the growth of existing monocrystalline silicon includes multiple pulling method (RCz) and continuous pulling method (CCz). In the multiple pul...

Claims

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Application Information

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IPC IPC(8): C30B15/20C30B29/06
CPCC30B15/20C30B29/06
Inventor 汪佳
Owner 徐州晶睿半导体装备科技有限公司
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