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Photoelectrode and preparation method and application thereof

A photoelectrode and electrode technology, applied in the photoelectrode field, can solve the problems of photocorrosion, high cost of precious metals, and limited large-scale application, and achieve the effects of improved performance, improved efficiency, and improved photocatalytic performance and activity.

Active Publication Date: 2021-01-22
TIANJIN UNIV RENAI COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006]However, whether it is pure Cu2O or pure Cu2S, as a photocatalyst, it has The following two disadvantages: (1) The electrons and holes separated by light excitation are easy to recombine and convert into heat energy on the surface of the catalyst, thereby reducing the photoelectric conversion efficiency or hydrogen production of the catalytic process; (2) because Cu is in an intermediate valence state (+ 1), easy to be oxidized, making the preservation of the catalyst more difficult, prone to photocorrosion and reducing the reactivity of the catalyst
However, due to the high cost of precious metals, its large-scale application is limited

Method used

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  • Photoelectrode and preparation method and application thereof

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Embodiment 1

[0073] This embodiment provides a kind of photoelectrode, described photoelectrode comprises fluorine-doped tin dioxide glass carrier and functional layer, and described functional layer comprises cuprous oxide thin film layer, cuprous sulfide thin film layer and Mo 2 CT x film layer. Among them, cuprous oxide thin film layer, cuprous sulfide thin film layer and Mo 2 CT x The thin film layers are sequentially stacked on the fluorine-doped tin dioxide glass carrier; the cuprous oxide thin film layer is located on the surface of the fluorine-doped tin dioxide glass carrier;

[0074] Described cuprous oxide film layer, cuprous sulfide film layer and Mo 2 The mass ratio of the CTx thin film layer is 1:0.17:0.1.

[0075] The preparation method of the photoelectrode is as follows:

[0076] (1) Prepare 0.05mol of Cu S o 4 and 50 mL of a mixed solution of 0.05 mol of trisodium citrate, and then adjust its pH value to 11.0 with 1 mol of NaOH solution, and heat the mixed solution...

Embodiment 2

[0081] This embodiment provides a kind of photoelectrode, described photoelectrode comprises fluorine-doped tin dioxide glass carrier and functional layer, and described functional layer comprises cuprous oxide thin film layer, cuprous sulfide thin film layer and Mo 2 CT x film layer. Among them, cuprous oxide thin film layer, cuprous sulfide thin film layer and Mo 2 CT x The thin film layers are sequentially stacked on the fluorine-doped tin dioxide glass carrier; the cuprous oxide thin film layer is located on the surface of the fluorine-doped tin dioxide glass carrier;

[0082] Described cuprous oxide film layer, cuprous sulfide film layer and Mo 2 CT x The mass ratio of the film layer is 1:0.15:0.1.

[0083] The preparation method of the photoelectrode is as follows:

[0084] (1) Prepare 0.05mol of Cu S o 4 and 50 mL of a mixed solution of 0.05 mol of trisodium citrate, and then adjust its pH value to 10.8 with 1 mol of NaOH solution, and heat the mixed solution to...

Embodiment 3

[0089] This embodiment provides a kind of photoelectrode, described photoelectrode comprises fluorine-doped tin dioxide glass carrier and functional layer, and described functional layer comprises cuprous oxide thin film layer, cuprous sulfide thin film layer and Mo 2 CT x film layer. Among them, cuprous oxide thin film layer, cuprous sulfide thin film layer and Mo 2 CT x The thin film layers are sequentially stacked on the fluorine-doped tin dioxide glass carrier; the cuprous oxide thin film layer is located on the surface of the fluorine-doped tin dioxide glass carrier;

[0090] Described cuprous oxide film layer, cuprous sulfide film layer and Mo 2 CT x The mass ratio of the film layer is 1:0.18:0.12.

[0091] The preparation method of the photoelectrode is as follows:

[0092] (1) Prepare 0.05mol of Cu S o 4 and 50 mL of a mixed solution of trisodium citrate of 0.05 mol, and then adjust its pH value to 11.5 with 1 mol of NaOH solution, and heat the mixed solution t...

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Abstract

The invention provides a photoelectrode and a preparation method and application thereof. The photoelectrode comprises a fluorine-doped stannic oxide glass carrier and a functional layer located on the fluorine-doped stannic oxide glass carrier, and the functional layer comprises a Mo2CTx film layer. The preparation method comprises the step of preparing a functional layer on a fluorine-doped stannic oxide glass carrier to obtain the photoelectrode, wherein the step of preparing the functional layer comprises the step of preparing a Mo2CTx thin film layer in a Mo2CTx solution through an impregnation method. The photoelectrode provided by the invention is good in stability, high in efficiency, simple in preparation process and low in cost when being used for photoelectric hydrogen evolution.

Description

technical field [0001] The invention belongs to the technical field of photoelectrodes, and relates to a photoelectrode and its preparation method and application. Background technique [0002] The development and utilization of sustainable clean energy is of great significance to social development and environmental protection. As an emerging energy technology, photoelectrochemical hydrogen evolution technology can combine the photoelectric conversion process and electrohydrogen evolution process to convert solar energy into photocurrent, and then use the photoelectric current to electrolyze water to produce hydrogen through a hydrogen evolution catalyst. Good development prospects. [0003] CN101143712A discloses a nano-electrode for hydrogen production by utilizing solar energy decomposition, including using titanium dioxide microspheres and other semiconductor materials such as zinc oxide to construct a layered nano-electrode. This document uses ultraviolet light to ex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B1/04C25B11/053C25B11/091
CPCC25B1/04Y02E60/36
Inventor 陈莹景元琳张静王玥
Owner TIANJIN UNIV RENAI COLLEGE
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