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Monitoring device in monocrystalline diamond growth process

A single crystal diamond, growth process technology, applied in the direction of measuring devices, instruments, etc., can solve the problems of cost increase, polycrystalline growth, black carbon inclusions, etc., achieve uniform feeding, ensure growth quality, and improve the effect of mixing

Pending Publication Date: 2021-01-08
北京清碳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] When microwave plasma chemical vapor deposition equipment is used to grow carat-level single crystal diamond, it takes about 10-15 days for the seed crystal to grow for a long time after it is placed in the CVD equipment. Under the influence of various conditions, it is very easy to have polycrystalline growth, black carbon inclusions, and internal stress problems at a certain time point, which will affect the product yield and increase the cost
[0003] It is necessary to set up a monitoring device to monitor the growth of diamond, but the existing monitoring device can only monitor the diamond, and cannot guarantee the growth quality of the diamond. Therefore, a monitoring device during the growth of single crystal diamond is now provided to solve this problem. technical problem

Method used

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  • Monitoring device in monocrystalline diamond growth process
  • Monitoring device in monocrystalline diamond growth process
  • Monitoring device in monocrystalline diamond growth process

Examples

Experimental program
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Effect test

Embodiment 1

[0026] see Figure 1~3 , in Embodiment 1 of the present invention, a structural diagram of a monitoring device in the growth process of single crystal diamond provided by the embodiment of the present invention, including: a base 1; a Venturi tube 2 fixedly installed on the base 1, a first mixing chamber 4, second mixing chamber 6, ionization chamber 8 and deposition chamber 26;

[0027] The deposition chamber 26 is provided with an observation window 17, the base 1 is fixedly mounted with a support 10, the support 10 is provided with a position-adjustable monitoring device 11, and the monitoring device 11 is arranged above the observation window 17 , it is convenient to observe the growth inside the deposition chamber 26 by setting the observation window 17;

[0028] The Venturi tube 2, the first mixing chamber 4, the second mixing chamber 6, the ionization chamber 8 and the deposition chamber 26 are communicated in sequence;

[0029] The neck of the Venturi tube 2 is provi...

Embodiment 2

[0032] see Figure 1~3 The main difference between this embodiment 2 and embodiment 1 is that, as a preferred embodiment of the present invention, a dispersing member 5 is provided at the connection between the first mixing chamber 4 and the Venturi tube 2, and the dispersing member 5 is provided for making The gas that enters into the first mixing chamber 4 disperses, thereby decelerating and mixing the gas in the first mixing chamber 4 ; providing mixing quality.

[0033] The dispersing member 5 includes a conical member 25 arranged at the bottom and a cylindrical member 27 installed on the conical member 25, and a plurality of helical blades 24 are arranged in an array on the outside of the cylindrical member 27; firstly, the conical member 25 makes two kinds of gases disperse, Then, the gas is spirally rotated inside the first mixing chamber 4 by the spiral blade 24, thereby increasing the collision chance between the gases and improving the mixing effect.

[0034] Three ...

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Abstract

The invention is suitable for the technical field of monocrystalline diamond production equipment and provides a monitoring device in a monocrystalline diamond growth process. The device comprises a base; wherein a venturi tube, a first mixing cavity, a second mixing cavity, an ionization chamber and a deposition chamber are fixedly mounted on the base; wherein the deposition chamber is provided with an observation window, the base is fixedly provided with a support, the support is provided with a position-adjustable monitoring device, and the monitoring device is arranged above the observation window; wherein the venturi tube, the first mixing cavity, the second mixing cavity, the ionization chamber and the deposition chamber are sequentially communicated; and a first input end communicated with the interior of the venturi tube is arranged at the neck part of the venturi tube. The diamond growth condition is detected, and meanwhile, the growth quality of the diamond is ensured.

Description

technical field [0001] The invention relates to the technical field of single crystal diamond production equipment, in particular to a monitoring device during the growth process of single crystal diamond. Background technique [0002] When microwave plasma chemical vapor deposition equipment is used to grow carat-level single crystal diamond, it takes about 10-15 days for the seed crystal to grow for a long time after it is placed in the CVD equipment. Under the influence of various conditions, it is very easy to have polycrystalline growth, black carbon inclusions, and internal stress problems at a certain point in time, which in turn affects product yield and increases costs. [0003] It is necessary to set up a monitoring device to monitor the growth of diamond, but the existing monitoring device can only monitor the diamond, and cannot guarantee the growth quality of the diamond. Therefore, a monitoring device during the growth of single crystal diamond is now provided ...

Claims

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Application Information

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IPC IPC(8): G01B21/08G01D21/00
CPCG01B21/08G01D21/00
Inventor 侯荣华彭俊杰王红雪刘敏强宁树兴柴喜红文首名
Owner 北京清碳科技有限公司
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