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Single crystal wafer and preparation method of crystal bar thereof

A single crystal and single crystal technology, applied in the field of preparation of single crystal wafers and ingots, can solve the problems of low pass rate and achieve the effects of increasing pass rate, prolonging cooling time, and improving the utilization rate of ingots

Inactive Publication Date: 2021-01-01
安徽中飞科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

According to the current existing technology, the production of large-sized solar germanium single crystals requires drawing large-sized germanium single crystal ingots, but the pass rate of each ingot reaching this index is lower than 12%.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] This embodiment provides a method for preparing a single crystal ingot. The graphite crucible used includes an outer pot and an inner floating pot. The inner floating pot is placed in the outer pot, and a small hole is provided at the bottom of the inner floating pot. The preparation method of the single crystal ingot of the present embodiment comprises the following steps:

[0029] (1) Loading: Put 70 kg of high-purity germanium ingot (polycrystalline with a purity of 6N obtained by zone melting method) into the inner floating pot, and then put the doping element high-purity gallium (purity 7N) into the inner floating pot The center position, quickly close the furnace cover;

[0030] (2) Vacuum pumping and leak detection: start the vacuum pumping program, and fill with nitrogen after the vacuum degree reaches the set value and the leak detection is qualified;

[0031] (3) chemical material: start the heating program to melt the high-purity germanium ingot and high-pur...

Embodiment 2

[0037] This embodiment provides a method for preparing a single crystal ingot, and the equipment used is the same as that in Embodiment 1. The preparation method of the single crystal ingot of the present embodiment comprises the following steps:

[0038] (1) Put 70 kg of high-purity germanium ingot (polycrystalline with a purity of 6N obtained by zone melting method) into the inner floating pot, and then place the doping element high-purity gallium (purity 7N) in the center of the inner floating pot , quickly close the furnace cover;

[0039] (2) Vacuum pumping and leak detection: start the vacuum pumping program, and fill with nitrogen after the vacuum degree reaches the set value and the leak detection is qualified;

[0040] (3) chemical material: start the heating program to melt the high-purity germanium ingot and high-purity gallium in the graphite crucible under the protection of nitrogen to form a melt;

[0041] (4) Seeding, necking, shouldering, turning shoulders, e...

Embodiment 3

[0046] This embodiment provides a method for preparing a single crystal ingot, and the equipment used is the same as that in Embodiment 1. The preparation method of the single crystal ingot of the present embodiment comprises the following steps:

[0047] (1) Loading: Put 70 kg of high-purity germanium ingot (polycrystalline with a purity of 6N obtained by zone melting method) into the inner floating pot, and then put the doping element high-purity gallium (purity 7N) into the inner floating pot The center position, quickly close the furnace cover;

[0048] (2) Vacuum pumping and leak detection: start the vacuum pumping program, and fill with nitrogen after the vacuum degree reaches the set value and the leak detection is qualified;

[0049] (3) chemical material: start the heating program to melt the high-purity germanium ingot and high-purity gallium in the graphite crucible under the protection of nitrogen to form a melt;

[0050] (4) Seeding, necking, shouldering, turnin...

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Abstract

The invention provides a single crystal wafer and a preparation method of a crystal bar thereof, and belongs to the technical field of crystal growth. A traditional Czochralski method is improved, anempty drawing process is added, the cooling speed is reduced, the cooling time is prolonged, the defects of bright spots, raised grains and the like on the surface of a single crystal wafer with the diameter of 4 inches or above prepared from the obtained single crystal bar are effectively reduced, the percent of pass reaching the low LPD standard is remarkably increased, the crystal bar utilization rate is increased, and the market requirements can be met. The enterprise profits are increased.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and in particular relates to a method for preparing a single crystal wafer and crystal bar. Background technique [0002] With the widespread application of solar cells in space solar systems and large-scale ground-based concentrated solar systems, the demand for germanium single-wafer substrate materials in the photovoltaic industry is increasing. Gallium arsenide compound multi-junction cells based on germanium single crystals have the advantages of high conversion efficiency, small relative weight and volume, and excellent resistance to cosmic ray radiation; crystal defects such as dislocations in such germanium single crystals directly affect Gallium arsenide epitaxial growth causes pits, bright spots or wavy undulations on the surface of the entire film layer, which affects key performances such as the fill factor (FF), photoelectric conversion efficiency (EFF) and battery life of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/04C30B15/20C30B15/36C30B29/08
CPCC30B15/04C30B15/20C30B15/36C30B29/08
Inventor 尹士平郭晨光黄雪丽
Owner 安徽中飞科技有限公司
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