Negative ion irradiation device

An irradiation device and negative ion technology, applied in the direction of plasma, ion implantation plating, sputtering plating, etc., can solve the problems of labor, cost and time, and achieve the effect of easy annealing treatment

Pending Publication Date: 2020-12-29
SUMITOMO HEAVY IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that annealing requires labor, cost, and time.

Method used

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  • Negative ion irradiation device
  • Negative ion irradiation device
  • Negative ion irradiation device

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Embodiment Construction

[0019] Hereinafter, a negative ion irradiation device according to one embodiment of the present invention will be described with reference to the drawings. It should be noted that in the description of the drawings, the same elements are assigned the same symbols, and repeated descriptions are omitted.

[0020] First, refer to figure 1 and figure 2 The structure of the negative ion irradiation apparatus which concerns on embodiment of this invention is demonstrated. figure 1 and figure 2 It is a schematic sectional view which shows the structure of the negative ion irradiation apparatus concerning this embodiment. figure 1 The state of operation at the time of plasma generation is shown in , figure 2 The operation state when the plasma is stopped is shown in .

[0021] Such as figure 1 and figure 2 As shown, the negative ion irradiation device 1 of the present embodiment is a device in which a film formation technique used in a so-called ion plating method is appli...

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Abstract

The invention provides a negative ion irradiation device capable of easily performing annealing treatment. A control unit (50) controls a voltage application unit (90) to start applying the bias voltage to the substrate (11) during the generation of the plasma (P) and to continue applying the bias voltage to the substrate (11) even after the plasma (P) has stopped. As a result, when the bias voltage is applied to the substrate (11) during the generation of the plasma (P), electrons present in the vacuum chamber (10) irradiate the substrate (11) due to the influence of the applied voltage. As aresult, electrons are irradiated onto the surface of the substrate (11), and the surface of the substrate (11) is heated by electron shock. After the plasma (P) is stopped, a voltage is continuouslyapplied to the substrate (11), so that the generated negative ions irradiate the surface of the substrate (11) and are injected into the substrate (11).

Description

technical field [0001] This application claims priority based on Japanese Patent Application No. 2019-118676 filed on June 26, 2019. The entire content of this Japanese application is incorporated in this specification by reference. [0002] The invention relates to a negative ion irradiation device. Background technique [0003] Conventionally, a device described in Patent Document 1 is known as a negative ion irradiation device. This negative ion irradiation device includes a gas supply unit that supplies a gas that is a source material of negative ions into a chamber, and a plasma generation unit that generates plasma in the chamber. The plasma generation unit generates negative ions by intermittently generating plasma in the chamber, and irradiates the object. [0004] Patent Document 1: Japanese Patent Laid-Open No. 2017-025407 [0005] Here, in the negative ion irradiation apparatus as described above, the object may be annealed by heating the object after implanti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32C23C14/54C23C14/58
CPCC23C14/32C23C14/54C23C14/582C23C14/48C23C14/28C23C14/56C23C14/50H05H2007/082H01J37/32357H01J37/32449H01J37/32422H01J37/32174H01J37/3244C23C14/58H01J2237/327C23C14/5826C23C14/541
Inventor 北见尚久酒见俊之山本哲也
Owner SUMITOMO HEAVY IND LTD
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