Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Methods and apparatus for calculating electromagnetic scattering properties of a structure

An electromagnetic scattering and property technology, applied in the direction of optomechanical equipment, microlithography exposure equipment, material analysis through optical means, etc., can solve the problem of large overall calculation time

Active Publication Date: 2020-12-22
ASML NETHERLANDS BV
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While the computational complexity of such solvers has improved, the population Computation time may still be (too) large

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Methods and apparatus for calculating electromagnetic scattering properties of a structure
  • Methods and apparatus for calculating electromagnetic scattering properties of a structure
  • Methods and apparatus for calculating electromagnetic scattering properties of a structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0069] figure 1 A lithographic apparatus is schematically depicted. Lithography equipment includes:

[0070] - an illumination system (irradiator) configured to condition a radiation beam B (eg UV radiation or DUV radiation).

[0071] - a support structure (e.g. mask table) MT configured to support a patterning device (e.g. mask) MA and connected to a first positioner PM configured to be precisely positioned according to certain parameters said patterning device;

[0072] - a substrate table (e.g. a wafer table) WT configured to hold a substrate (e.g. a resist-coated wafer) W and connected to a second positioner PW configured according to certain parameters to precisely position the substrate; and

[0073] - a projection system (e.g. a refractive projection lens system) PL configured to project a pattern imparted to the radiation beam B onto a target portion C (e.g. comprising one or more dies) of the substrate W by the patterning device MA superior.

[0074] The illumin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides method of calculating electromagnetic scattering properties of a structure represented as a nominal structure and a structural perturbation, the method comprising a step(1008) of numerically solving a volume integral equation comprising a nominal linear system to determine a nominal vector field being independent with respect to the structural perturbation; a step (1010) of using a perturbed linear system to determine an approximation of a vector field perturbation arising from the structural perturbation, by solving a volume integral equation or an adjoint linear system. Matrix-vector multiplication of a nominal linear system matrix convolution operator may be restricted to sub-matrices; and a step (1012) of calculating electromagnetic scattering propertiesof the structure using the determined nominal vector field and the determined approximation of the vector field perturbation.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from European application 18172091.3 filed on May 14, 2018, the entire content of which is hereby incorporated by reference. technical field [0003] The invention relates to the calculation of electromagnetic scattering properties of periodic structures with structural perturbations. The invention can be applied, for example, in the measurement of microstructures, for example to evaluate the critical dimension (CD) performance of a lithographic apparatus. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus may be used, for example, in integrated circuit (IC) fabrication. In that case, a patterning device (which may alternatively be referred to as a mask or reticle) may be used to create the circuit pattern to be formed on the individual layers of t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20
CPCG03F7/705G03F7/70625G01N21/9501G01N21/95607G03F9/7092G03F7/70633G03F7/7065
Inventor M·G·M·M·范卡拉埃吉M·皮萨连科理查德·金塔尼利亚
Owner ASML NETHERLANDS BV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com