Two-dimensional tungsten disulfide self-configuration homojunction, preparation method and application thereof
A technology of tungsten disulfide and homojunction, applied in chemical instruments and methods, inorganic chemistry, tungsten compounds, etc., can solve problems such as difficult-to-control material thickness, large surface defects, etc., achieve good crystallization, improve quality, and short growth time Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0053] (1) Select a size of 1cm 2 For a square silicon dioxide silicon wafer, put it into acetone, absolute ethanol, and deionized water for 5 minutes, then rinse it with deionized water, and quickly dry it with nitrogen; Hydrophilic surface treatment of nitrogen: Put the silicon dioxide silicon wafer into the plasma degumming machine, turn on the pneumatic N with an air pressure of 6bar 2 The valve is filled and then opened with process gas O at 1.5 bar 2Plasma treatment is performed on the valve to obtain pretreated silicon dioxide silicon wafers; 1.5g of tungsten disulfide powder (purity of more than 99.9%) is placed on a clean quartz boat, and the pretreated silicon dioxide silicon wafers are laid flat In another clean quartz boat, place the quartz boat containing tungsten disulfide powder in the middle of the tube furnace, and place the quartz boat loaded with pretreated silica wafers downstream of the tube furnace , the placement position is that the silicon wafer is i...
Embodiment 2
[0062] (1) Select a size of 1cm 2 For a square silicon dioxide silicon wafer, put it into acetone, absolute ethanol, and deionized water for 5 minutes, then rinse it with deionized water, and quickly dry it with nitrogen; Hydrophilic surface treatment of nitrogen: Put the silicon dioxide silicon wafer into the plasma degumming machine, turn on the pneumatic N with an air pressure of 6bar 2 The valve is filled and then opened with process gas O at 1.5 bar 2 The valve is subjected to Plasma treatment to obtain a pretreated silicon dioxide silicon wafer; 1g of tungsten disulfide powder (purity of more than 99.9%) is placed on a clean quartz boat, and the pretreated silicon dioxide silicon wafer is placed flat on the In another clean quartz boat, place the quartz boat containing tungsten disulfide powder in the middle of the tube furnace, and place the quartz boat loaded with the pretreated silicon dioxide wafers downstream of the tube furnace. The placement position is that the...
Embodiment 3
[0070] (1) Select a size of 1cm 2 For a square silicon dioxide silicon wafer, put it into acetone, absolute ethanol, and deionized water for 5 minutes, then rinse it with deionized water, and quickly dry it with nitrogen; Hydrophilic surface treatment of nitrogen: Put the silicon dioxide silicon wafer into the plasma degumming machine, turn on the pneumatic N with an air pressure of 6bar 2 The valve is filled and then opened with process gas O at 1.5 bar 2 The valve is subjected to Plasma treatment to obtain a pretreated silicon dioxide silicon wafer; 2g of tungsten disulfide powder (purity of more than 99.9%) is placed on a clean quartz boat, and the pretreated silicon dioxide silicon wafer is placed flat on the In another clean quartz boat, place the quartz boat containing tungsten disulfide powder in the middle of the tube furnace, and place the quartz boat loaded with the pretreated silicon dioxide wafers downstream of the tube furnace. The placement position is that the...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com