Nano-capacitor three-dimensional integrated structure and preparation method thereof

Abstract

The invention discloses a nano-capacitor three-dimensional integrated structure and a preparation method thereof. The nano-capacitor three-dimensional integrated structure comprises a first nano-capacitor structure and a second nano-capacitor structure which are vertically stacked and formed in a groove of a silicon substrate, and the first nano-capacitor structure and the second nano-capacitor structure are connected in parallel. The high aspect ratio silicon nanostructure etched at one time is changed into the high aspect ratio silicon nanostructure etched at two times, so that the requirement on the precision of etching equipment can be reduced, and the manufacturing cost can be reduced. Due to the fact that the aspect ratio of a single silicon nanostructure is reduced, the step coverage rate of the thin film can be increased, the conformality of the thin film can also be enhanced, and therefore holes of the thin film in the deposition process can be reduced. And traditional sputtering equipment can be adopted to deposit a metal material, so that a metal electrode with relatively low resistivity can be obtained. Moreover, the overall capacitance density of the nano capacitor canbe improved, and the planar area occupied by the capacitor is reduced, so that a small-size energy buffer device can be obtained.

Description

technical field [0001] The invention belongs to the field of integrated circuit manufacturing, and in particular relates to a three-dimensional integrated structure of nanocapacitors and a preparation method thereof. Background technique [0002] Currently, batteries are still the main energy supply components for portable electronic devices. Although battery technology is constantly evolving, there is still a trade-off between battery capacity and volume and weight. Accordingly, some alternative power supply components with large capacity, light weight, and small size have been researched and developed, such as micro fuel cells, plastic solar cells, and energy harvesting systems. In all the cases mentioned above, an energy buffer system is usually required to maintain a continuous and steady energy output. For example, fuel cell systems are generally believed to have slower start-up times and lower kinetic energy. Therefore, a hybrid system in which the fuel cell provide...

AI Technical Summary

Problems solved by technology

Due to the high resistivity of the silicon material, the series resistance of the nanocapacitor is large, which will reduce the power density

Although the atomic layer deposition process can deposit a thin film with good conformality and uniformity in a high aspect ratio structure, due to the large amount of impurities in the deposited metal material, the resistivity of the metal electrode is high, which affects the power density of the nanocapacitor

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