Memory, forming method thereof and semiconductor device

Abstract

The invention provides a memory, a forming method thereof and a semiconductor device. A first isolation structure and a second isolation structure which are made of different insulating materials areused for defining the active regions of the unit devices, so that the formation of isolation regions with different dielectric constants is facilitated, the isolation performance of the word lines passing through the isolation regions can be improved by utilizing the isolation structures in the isolation regions, and the problem of electrical drifting of the word lines is solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a memory and a forming method thereof. Background technique [0002] As the semiconductor industry enters a new era of high-performance and multi-functional integrated circuits, the density of semiconductor elements in integrated circuits will increase accordingly, and the spacing between semiconductor elements will decrease accordingly. At this time, for the conductive components used to realize electrical transmission in the semiconductor element, as the distance between adjacent conductive components decreases, the interference phenomenon between adjacent conductive components becomes more and more serious. obvious. [0003] Among them, there is also a trend of shrinking size in the field of memory, so that the arrangement among various components in the memory is also more compact. However, as mentioned above, with the continuous reduction of the distance, it is more...

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Problems solved by technology

However, as mentioned above, with the continuous reduction of the distance, it is more likely to cause the problem of crosstalk between adjacent conductive components

For example, it is easy to crosstalk between adjacent word lines; and it is also easy to generate interference between the word line and the active area of ​​adjacent and isolated unit devices, which will cause problems such as electrical drift of the word line

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