A preparation method and product of rare earth-doped indium sulfide nanosheet thin film photoanode

A rare earth doping and photoanode technology, applied in chemical instruments and methods, electrodes, electrolytic components, etc., to achieve high energy transfer efficiency, improve photoelectrochemical performance, and inhibit recombination effects

Active Publication Date: 2021-07-27
NORTHWEST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Different from transition metal ions, trivalent lanthanide rare earth ions have rich energy level structures and excellent optical properties, which have recently attracted the attention of researchers. There are few research reports on this aspect. Co-doping rare earth ions is expected to realize the The synergistic effect of energy levels can effectively inhibit the recombination of photogenerated electrons and holes

Method used

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  • A preparation method and product of rare earth-doped indium sulfide nanosheet thin film photoanode
  • A preparation method and product of rare earth-doped indium sulfide nanosheet thin film photoanode
  • A preparation method and product of rare earth-doped indium sulfide nanosheet thin film photoanode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] This example prepares β-In 2 S 3 :Yb 3+ -Tm 3+ Thin film photoelectrode material, In 3+ :Yb 3+ :Tm 3+ =197:2:1

[0026] The raw materials used are shown in Table 1:

[0027] Table 1

[0028]

[0029]

[0030] Preparation:

[0031] 1) First, clean the FTO glass, place the FTO glass in deionized water, ethanol, and acetone for 30 minutes of ultrasonic treatment and blow dry for later use.

[0032] 2) Weigh indium chloride, thioacetamide, ytterbium nitrate, thulium nitrate, and 40ml of deionized water, transfer to a beaker and stir for 30 minutes, in which indium chloride, thioacetamide, ytterbium nitrate, and thulium nitrate Quantities are 0.9456mmol, 2.88mmol, 0.0096mmol, 0.0048mmol, guaranteed In 3+ :Yb 3+ :Tm 3+ =197:2:1, S 2- The amount of the substance is 3 times the sum of the amount of all cationic substances, the concentration of indium chloride, ytterbium nitrate, and thulium nitrate is 24mM, and the concentration of thioacetamide is 72mM.

[...

Embodiment 2

[0035] This example prepares β-In 2 S 3 :Yb 3+ -Tm 3+ Thin film photoelectrode material, In 3+ :Yb 3+ :Tm 3+=193:6:1

[0036] The raw materials used are shown in Table 2;

[0037] Table 2

[0038]

[0039] Preparation:

[0040] 1) First, clean the FTO glass, place the FTO glass in deionized water, ethanol, and acetone for 30 minutes of ultrasonic treatment and blow dry for later use.

[0041] 2) Weigh indium chloride, thioacetamide, ytterbium nitrate, thulium nitrate, and 40ml of deionized water, transfer to a beaker and stir for 30 minutes, in which indium chloride, thioacetamide, ytterbium nitrate, and thulium nitrate Quantities are 0.9264mmol, 2.88mmol, 0.0288mmol, 0.0048mmol, guaranteed In 3+ :Yb 3+ :Tm 3+ =193:6:1, S 2- The amount of the substance is 3 times the sum of the amount of all cationic substances, the concentration of indium chloride, ytterbium nitrate, and thulium nitrate is 24mM, and the concentration of thioacetamide is 72mM.

[0042] Transfe...

Embodiment 3

[0044] This example prepares β-In 2 S 3 :Yb 3+ -Tm 3+ Thin film photoelectrode material, In 3+ :Yb 3+ :Tm 3+ =189:10:1

[0045] The raw materials used are shown in Table 3;

[0046] table 3

[0047]

[0048] Preparation:

[0049] With embodiment 1, difference is, preparation raw material indium chloride (InCl 3 4H 2 O), ytterbium nitrate (Yb(NO 3 ) 3 ·6H 2 O), thulium nitrate (Tm(NO 3 ) 3 ·6H 2 O) molar ratio In 3+ :Yb 3+ :Tm 3+ =189:10:1. Wherein indium chloride, thioacetamide, ytterbium nitrate, and thulium nitrate are respectively 0.9072mmol, 2.88mmol, 0.048mmol, and 0.0048mmol;

[0050] The prepared film (YTS-5) was taken out from the reactor, rinsed and dried with deionized water. The photocurrent density of the prepared thin film (YTS-5) reached 0.28mA / cm 2 , with pure β-In 2 S 3 Compared with the photoelectrochemical performance, it has a significant improvement, which is about pure β-In 2 S 3 (0.25mA / cm 2 ) 1.14 times ( figure 1 ).

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Abstract

The invention discloses a preparation method of a rare earth-doped indium sulfide nanosheet thin film photoanode and its product. The preparation method comprises the following steps: dissolving thulium nitrate, ytterbium nitrate, an indium source and a sulfur source in water, stirring to obtain a precursor solution and placing In the reaction kettle, place the conductive glass face down in the reaction kettle, keep it warm at 170°C to 200°C for 20h to 24h, take it out and dry to obtain the rare earth-doped indium sulfide nanosheet film photoanode; the present invention adopts Doping thulium ions and ytterbium ions in the indium sulfide nanosheet film can significantly improve the photocurrent density and photoelectrochemical performance of the indium sulfide nanosheet film photoanode.

Description

technical field [0001] The invention relates to the technical field of photoelectric catalysis, in particular to a method for preparing a rare earth-doped indium sulfide nanosheet thin-film photoanode and a product thereof. Background technique [0002] Indium sulfide (In 2 S 3 ) has good narrow bandgap, high stability, low toxicity and other characteristics, as well as a variety of morphologies including nanosheets, nanotubes, nanorods and hollow microspheres, which makes it not only as a wide-spectrum photocatalytic / photoelectric It is a good candidate for catalyst and can be used as an excellent sensitizer for wide-bandgap photocatalysis / photoelectrocatalyst. However, In 2 S 3 The photocatalytic / photoelectrocatalytic efficiencies are still low due to the fast recombination of self-photogenerated carriers. Up to now, many methods have been used to improve the In 2 S 3 photocatalytic / photoelectrocatalytic efficiency, including the controlled synthesis of In 2 S 3 d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B11/091C25B1/55B01J27/04B01J35/00B01J35/02
CPCB01J27/04B01J35/0033B01J35/004B01J35/023Y02P20/133
Inventor 胡晓云李秋洁苗慧樊君刘恩周成宇飞王佳伟张德恺赵俊峰
Owner NORTHWEST UNIV
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