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Grating coupler based on lithium niobate thin film material and manufacturing method thereof

A technology of grating coupler and thin film material, which is applied in the field of grating coupler, can solve the problems of low coupling efficiency of grating coupler, few grating couplers, optimization of grating coupler, etc., achieve high smoothness and reduce processing accuracy requirements , the effect of reducing alignment requirements

Active Publication Date: 2020-11-20
SHANGHAI JIAODA INTELLECTUAL PORPERTY MANAGEMENT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The characteristics and defects of the existing grating couplers are: the manufacturing process is complicated, and most of them are based on silicon-based materials, and there are few grating couplers based on lithium niobate materials cut in the X direction
Moreover, the device parameters such as the etching depth of the grating coupler and the thickness of the silicon oxide cladding are not fully optimized, resulting in low coupling efficiency of the grating coupler

Method used

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  • Grating coupler based on lithium niobate thin film material and manufacturing method thereof
  • Grating coupler based on lithium niobate thin film material and manufacturing method thereof
  • Grating coupler based on lithium niobate thin film material and manufacturing method thereof

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Embodiment Construction

[0024] Such as figure 1 As shown, this embodiment relates to a grating coupler based on lithium niobate thin film material, including: a lithium niobate photonic chip on an insulator and an optical fiber 7 arranged above it, and the lithium niobate photonic chip on an insulator is from top to bottom The bottom includes in sequence: a converging grating coupling mechanism, a silicon dioxide buried layer 2 and a silicon substrate 1, wherein: the thickness of the silicon substrate 1 is 500 μm, and the thickness of the silicon dioxide buried layer 2 is 4.7 μm.

[0025] Such as figure 1 and image 3 As shown, the described converging grating coupling mechanism includes: a lithium niobate optical waveguide 8, a tapered coupling region 9, a lithium niobate coupling grating 10, and a lithium niobate coupling grating 10 and a lithium niobate optical waveguide 8. Silicon dioxide cladding 4 for improved coupling efficiency.

[0026] The silicon dioxide coating 4 can further improve th...

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Abstract

The invention discloses a grating coupler based on a lithium niobate film material and a manufacturing method thereof. The grating coupler comprises a grating coupler based on the lithium niobate thinfilm material comprising a lithium niobate photonic chip on an insulator and an optical fiber arranged on the lithium niobate photonic chip, and the lithium niobate photonic chip on the insulator sequentially comprises a convergent grating coupling mechanism, a silicon dioxide buried layer and a silicon substrate from top to bottom. The device is relatively high in coupling efficiency and relatively large in working wavelength bandwidth, facilitates large-scale integration and is used for performing performance test on devices on the lithium niobate photon integrated chip.

Description

technical field [0001] The invention relates to a technology in the field of passive photonic devices, in particular to a grating coupler based on a lithium niobate thin film material and used for vertically coupling an optical fiber directly to a chip and a manufacturing method thereof. Background technique [0002] The existing grating couplers are mainly based on silicon-based materials. Silicon-based optoelectronics has been developed for a long time, and the technology is relatively mature, but limited by the material characteristics of silicon, silicon-based optoelectronics has certain limitations, and niobate Compared with silicon, lithium has many material advantages, such as high electro-optic coefficient, high nonlinear coefficient, wide transparent wavelength range, etc. [0003] In order to test the on-chip devices of lithium niobate-based photonic integrated chips, a key step is the input and output of optical signals. The characteristics and defects of the exi...

Claims

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Application Information

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IPC IPC(8): G02B6/293G02B6/34G02B6/12
CPCG02B6/29304G02B6/34G02B6/12G02B2006/12147
Inventor 金贤敏韩丰恺李轩坤刘民
Owner SHANGHAI JIAODA INTELLECTUAL PORPERTY MANAGEMENT CO LTD
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