High-efficiency power semiconductor combined device

Abstract

The invention discloses a high-efficiency power semiconductor combined device, which comprises an MOS tube, an IGBT tube and a DIODE tube which are connected in parallel. The drain electrode of the MOS tube and the collector electrode of the IGBT tube are connected with the cathode of the DIODE tube, and the source electrode of the MOS tube and the emitter electrode of the IGBT tube are connectedwith the anode of the DIODE tube. Compared with the prior art, the high-efficiency power semiconductor combined device has the advantages that the MOS tube, the IGBT tube and the DIODE tube are connected in parallel, so that the advantages of the MOS tube, the IGBT tube and the DIODE tube can be exerted, the defects of the MOS tube, the IGBT tube and the DIODE tube can be avoided, the device losscan be obviously reduced, and the efficiency of the converter is improved. Besides, the circuit composite device is wide in application range, and can be used in occasions where Si IGBTs or SiC MOSFETs are maturely used at present, such as BUCK, BOOST, APFC, INVERTER, DC / DC converters and other electric energy converters.

Description

technical field [0001] The invention belongs to the application field of power electronic devices, and in particular relates to a high-efficiency power semiconductor combined device which is composed of MOS tubes, IGBT tubes and DIODE tubes connected in parallel. Background technique [0002] With the development of semiconductor integrated circuits, various transistors have become very important electronic components. Among them, MOS tubes, IGBT tubes and DIODE tubes have received more and more attention due to their good performance. The IGBT tube has high reverse withstand voltage and high current characteristics, but it has very strict requirements on the drive circuit, and is not suitable for high-frequency applications. Generally, the operating frequency of the IGBT tube is below 20kHz. The MOS tube has the characteristics of high operating frequency and high temperature resistance, and at the same time has the characteristics of low on-state resistance and small switc...

AI Technical Summary

Problems solved by technology

IGBT tubes have high reverse withstand voltage and high current characteristics, but they have strict requirements on the drive circuit, and are not suitable for high-frequency applications. Generally, the operating frequency of IGBT tubes is below 20kHz

The MOS tube has the characteristics of high operating frequency and high temperature resistance, and at the same time has the characteristics of low on-state resistance and small switching loss. It is the application trend of increasing power density and improving efficiency in high frequency and high voltage applications. The internal resistance is high, which limits its application

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