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Modified hole transport layer perovskite light emitting diode and preparation method thereof

A technology of hole transport layer and light-emitting diode, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of low performance and achieve the effects of reducing defects, improving external quantum efficiency, and optimizing performance

Pending Publication Date: 2020-11-13
INST OF FLUID PHYSICS CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is: the problem of low performance of the existing perovskite light-emitting diode optoelectronic devices

Method used

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  • Modified hole transport layer perovskite light emitting diode and preparation method thereof
  • Modified hole transport layer perovskite light emitting diode and preparation method thereof
  • Modified hole transport layer perovskite light emitting diode and preparation method thereof

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preparation example Construction

[0045] A method for preparing a perovskite light-emitting diode with a modified hole transport layer, comprising the following steps:

[0046] Step A, blending the polyvinylcarbazole material solution and the polyethylene oxide material solution, and stirring at room temperature to form a mixed solution;

[0047] Step B, preparing the mixed solution into a thin film by coating, and the thin film is a hole transport layer;

[0048] Step C, spin-coating a perovskite solution on the film described in step B to prepare a perovskite light-emitting diode with a modified hole transport layer.

[0049] Further, the following detailed steps are included:

[0050] SA1, blend polyvinyl carbazole and polyethylene oxide at a mass ratio of 5:1 to 6:0 to form a 6 mg / ml solution, stir until it is evenly mixed, and stir at room temperature for 2 hours to form a blend solution;

[0051] SB1, the mixed solution is spin-coated at 4000rpm / min for 60s, and heated in a glove box at 150°C for 15min ...

Embodiment 1

[0057] This embodiment provides a method for preparing a perovskite light-emitting diode comprising a modified hole transport layer, such as figure 1 As shown, the photoelectric device hole transport layer is made of polyvinyl carbazole and polyethylene oxide solution blended and then coated. The specific preparation steps are as follows:

[0058] Step 1, preparing a blend solution of polyvinylcarbazole and polyethylene oxide hole transport material:

[0059] Blend polyvinyl carbazole and polyethylene oxide at a mass ratio of 5.3:0.7 to form a 6 mg / ml solution, stir until it is evenly mixed, and stir at room temperature for 2 hours to form a blended solution;

[0060] Step 2, prepare the mixed solution into a thin film by coating, spin coating at 4000rpm / min for 60s, and heat in the glove box at 150°C for 15min:

[0061] Step 3, the CsBr:PbBr 2 Prepare a 12 mg / ml PEABr DMSO solution at a molar ratio of 1.2:1, and stir for 12 hours. The solution obtained was continued to be ...

Embodiment 2

[0064] The difference between this embodiment and embodiment 1 is that in step 2, the gold nanoparticle aqueous solution and the 3,4-ethylenedioxythiophene: polystyrene sulfonate solution are sequentially set to six groups of different proportioning relationships according to the volume ratio , as shown in Table 1 below.

[0065] Table 1 The highest brightness, highest lumen efficiency and highest external quantum efficiency of the modified hole transport layer under different mass ratio conditions

[0066]

[0067] One, the film performance test result prepared by the present embodiment:

[0068] Different mass ratios (polyvinylcarbazole: mass ratio of polyethylene oxide), measure the highest brightness, the highest lumen efficiency and the highest external quantum efficiency of the modified hole transport layer, and the test results are shown in Table 1;

[0069] Two, the performance of the film prepared in this embodiment and the polyfluorene derivative film is analyzed...

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Abstract

The invention discloses a modified hole transport layer perovskite light emitting diode and a preparation method thereof, relates to the field of photoelectric devices, and solves the problem of low performance of an existing perovskite light emitting diode photoelectric device. The light emitting diode comprises a hole transport layer used in the perovskite light emitting diode device. The hole transport layer is made of a blended solution comprising polyvinylcarbazole and polyepoxyethylene, and the hole transport layer is used as an attachment for rotary coating of a PEABr DMSO solution. ThePEABr DMSO solution forms a two-dimensional quasi-crystal structure on the hole transport layer. The brightness of the prepared photoelectric device is obviously improved, the lumen efficiency of theprepared photoelectric device is obviously improved, the external quantum efficiency of the prepared photoelectric device is obviously improved, and meanwhile, compared with all literatures reportedat present, the optimal performance effect is achieved.

Description

technical field [0001] The invention relates to the field of photoelectric devices, in particular to a perovskite light-emitting diode with a modified hole transport layer and a preparation method thereof. Background technique [0002] Metal halide perovskite materials have become the next-generation electroluminescent materials after organic semiconductor materials due to their excellent optoelectronic properties. In recent years, red and green light-emitting perovskite electroluminescent devices have made great progress, showing good application prospects in the fields of display and lighting. But in comparison, the performance of perovskite electroluminescent devices is still at a low level, which restricts the application of perovskite light-emitting diodes in the field of full-color display. Therefore, how to improve the performance of perovskite electroluminescent devices has become an important issue in the scientific community recently, and the optimization of devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/15H10K71/12H10K85/111H10K85/141H10K50/155
Inventor 吴小龑陈平刘国栋李婷胡流森
Owner INST OF FLUID PHYSICS CHINA ACAD OF ENG PHYSICS
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