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Insulated gate bipolar transistor and forming method thereof

A bipolar transistor, insulated gate technology, applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problem of difficulty in preparing hydrogen-doped regions with stable distribution, and achieve the effect of smooth voltage changes and improved performance

Active Publication Date: 2020-11-13
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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  • Abstract
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for forming an insulated gate bipolar transistor, so as to solve the difficulty in preparing a hydrogen-doped region with stable distribution in the existing forming method, which is conducive to improving the performance stability of the formed transistor device

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  • Insulated gate bipolar transistor and forming method thereof
  • Insulated gate bipolar transistor and forming method thereof
  • Insulated gate bipolar transistor and forming method thereof

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Embodiment Construction

[0054] The core idea of ​​the present invention is to provide a method for forming an insulated gate bipolar transistor, which is conducive to improving the preparation accuracy of the buffer layer in the device.

[0055] specific reference figure 1 As shown, the forming method of the insulated gate bipolar transistor may include:

[0056] Step S100, providing a substrate, the substrate has an opposite first surface and a second surface, and a gate conductive layer, a body of the first doping type are formed in a part of the substrate corresponding to the first surface region and an emitter region of a second doping type;

[0057] Step S200, performing an ion implantation process and an annealing process on the second surface of the substrate to form a buffer region of the second doping type and a collector region of the first doping type;

[0058] Step S300, performing an ion implantation process on the second surface of the substrate to form a hydrogen-doped hydrogen-doped...

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Abstract

The invention provides an insulated gate bipolar transistor and a forming method thereof. The method comprises the following steps of: after forming a collector region of a first doping type and a buffer region of a second doping type, forming hydrogen doping, so that a hydrogen-doped region can be prevented from being affected by the processing technology of other doped regions to facilitate theimprovement of the control precision of the preparation technology of the hydrogen-doped region and to be easier to form a plurality of hydrogen-doped subareas with the ion concentration peak values sequentially reduced in a direction away from the surface of the substrate. At the moment, based on the formed buffer region and the hydrogen-doped region with the concentration distribution capable ofbeing accurately controlled, efficient electric field cut-off can be achieved when the transistor device is turned off, and the performance of the transistor device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an insulated gate bipolar transistor and a forming method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT, Insulated Gate Bipolar Transistor), which combines the gate voltage control characteristics of MOSFET and the low on-resistance characteristics of bipolar transistors, improves the mutual restraint of device withstand voltage and on-resistance , has the advantages of high voltage, high current, high frequency, high power integration density, large input impedance, small on-resistance, and low switching loss. It has gained wide application space in many fields such as frequency conversion home appliances, industrial control, electric and hybrid vehicles, new energy, and smart grid. [0003] Generally speaking, as the substrate thickness of the IGBT (that is, the thickness of the drift region) increases, the turn-off voltage of the device...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/7393H01L29/0603H01L29/0684H01L29/66333
Inventor 王珏陈政戴银徐杨徐承福
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP
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