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Distributed feedback laser based on air hole and preparation method

A technology of distributed feedback and air holes, applied in the direction of lasers, semiconductor lasers, phonon exciters, etc., can solve the problems of large size, unfavorable chip integration, and high device cost, so as to increase optical gain, facilitate later integration, and shrink volume effect

Pending Publication Date: 2020-11-10
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, there is a problem with the DFB-LD chip at present: the size is large, which is not conducive to chip integration, and at the same time, the device cost is also high due to the large size

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  • Distributed feedback laser based on air hole and preparation method
  • Distributed feedback laser based on air hole and preparation method
  • Distributed feedback laser based on air hole and preparation method

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Embodiment Construction

[0031] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0032] figure 1 A three-dimensional schematic diagram of an air hole-based distributed feedback laser provided by an embodiment of the present invention is shown; figure 2 A top view of an air hole-based distributed feedback laser provided by an embodiment of the present invention is shown. image 3 A cross-sectional view of an air hole-based d...

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Abstract

The embodiment of the invention provides a distributed feedback laser based on an air hole and a preparation method. The laser comprises a P electrode, a P doped layer, an active layer, an N doped layer and an N electrode, the two sides of the P electrode are each provided with an air hole waveguide array, each air hole waveguide array is formed by a plurality of air holes, and each air hole penetrates through the P doped layer, the active layer and the N doped layer and is cut off on the upper surface of a substrate. By designing an air hole structure, a two-dimensional planar photonic crystal is formed, a photonic band gap is generated, defects are introduced into the complete photonic crystal, light is limited in the defects by utilizing the photonic band gap to form a line defect photonic crystal waveguide, and the light gain of a unit transmission distance can be increased by a slow light effect generated in the photonic band gap in a defect mode; and the laser lasing condition that the gain exceeds the loss is easy to realize, so the resonant cavity structure of a traditional DFB-LD laser can be shortened, the size of a chip is reduced, and the integratable performance of thechip is improved.

Description

technical field [0001] The invention relates to the field of integrated optoelectronic devices, in particular to an air hole-based distributed feedback laser and a preparation method. Background technique [0002] Distributed feedback laser (DFB-LD) is a laser with a Bragg grating built in a semiconductor laser and relying on the mode selection principle of the grating to obtain a specific lasing wavelength. The grating of the DFB laser is distributed in the resonant cavity of the entire laser, and the light wave can obtain gain while feeding back. DFB-LD can generally be divided into two types: gain coupling and refractive index coupling. The former is to engrave the grating structure into the active area, so that the gain of the active area changes periodically, thereby generating feedback to the optical guided mode in the laser cavity. . The latter is to engrave the grating structure above the active region, and generate feedback to the photoconductive mode of the laser...

Claims

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Application Information

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IPC IPC(8): H01S5/12H01S5/10
CPCH01S5/12H01S5/1042H01S2304/00Y02P70/50
Inventor 黄翊东崔开宇刘仿冯雪张巍
Owner TSINGHUA UNIV
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