Tray of semiconductor processing equipment and semiconductor processing equipment

Abstract

The invention provides a tray of semiconductor processing equipment and the semiconductor processing equipment. The tray of the semiconductor processing equipment comprises a tray body and a supporting part, an accommodating groove for accommodating a wafer is formed in the tray body, the accommodating groove comprises a convex part positioned on the bottom surface of the accommodating groove, theupper surface of the convex part is an arc surface, and the distance between a point on the arc surface and the bottom surface of the accommodating groove is gradually reduced from the center of thearc surface to the edge so as to reduce the temperature difference between the center of the tray and the edge of the tray; the supporting part is arranged on the tray body and surrounds the peripheryof the arc surface, the supporting part is used for supporting the wafer, and a gap is formed between the wafer and the arc surface, so that the heat conduction efficiency of the tray to the edge ofthe wafer is reduced. According to the tray of the semiconductor processing equipment and the semiconductor processing equipment provided by the invention, the temperature uniformity of the wafer in the semiconductor technological process can be improved, so that the resistivity uniformity of an epitaxial layer is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor equipment, in particular to a tray for semiconductor processing equipment and the semiconductor processing equipment. Background technique [0002] In the semiconductor epitaxial process, since the reaction rate of the dopant gas (such as phosphine) is very sensitive to temperature, the temperature distribution on the substrate to be processed (Wafer) during the process will have a significant impact on the resistivity distribution of the epitaxial layer. influences. [0003] In the epitaxial process, the substrate is usually carried by a tray, and the substrate is heated by a heating device arranged on the upper and lower sides of the tray, wherein the tray is made of heat-conducting material, and is provided with an accommodating groove for accommodating the substrate ( Pocket), and a step structure integrated with the containing tank is provided in the containing tank, and each h...

AI Technical Summary

Problems solved by technology

[0004] However, due to the defects in the processing technology of the existing reflective screen, the substrate will always have a low center temperature and a high edge temperature during the process, which eventually leads to poor resistivity uniformity of the epitaxial layer.

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