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Method and device for improving etching uniformity of wafer

A uniformity, wafer technology, applied in the field of improving the uniformity of wafer etching, can solve the problem of uneven etching of semiconductor epitaxial layer

Active Publication Date: 2020-10-23
FUJIAN JING AN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of this application is to provide a method for improving the uniformity of wafer etching, which can improve the uneven etching of the semiconductor epitaxial layer on the wafer by existing MOCVD machines The problem

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  • Method and device for improving etching uniformity of wafer
  • Method and device for improving etching uniformity of wafer
  • Method and device for improving etching uniformity of wafer

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Embodiment Construction

[0057] The technical solutions of specific embodiments of the present application will be described in further detail below in conjunction with the accompanying drawings. These embodiments are only used to illustrate the present application, rather than limit the present application.

[0058] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in this application according to specific situations.

[0059] In the description of the present application, it should be noted that...

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Abstract

The invention discloses a method for improving the etching uniformity of a wafer, and relates to the related technical field of semiconductors, and the method comprises the following steps that the wafer is fixed by a wafer fixing device, and at least the etching surface of the wafer is exposed; and the wafer is rotated around a preset axis so that the amount of etching gas in contact with each region of the etched surface of the wafer within a predetermined period of time is the same or substantially the same. The wafer fixing device can expose the etching surface of the wafer, the shielded area of the etching surface of the wafer is reduced, and etching gas can easily reach the etching surface of the wafer and etch the etching surface of the wafer; the wafer rotates around the preset axis, the wafer uniformly reaches an area with a higher etching rate and an area with a lower etching rate, the amount of the etching gas contacted in each rotation period is the same or basically the same, and the etching surface of the wafer can be uniformly contacted with the etching gas so as to ensure that the etching gas uniformly etches the wafer.

Description

technical field [0001] The present application relates to the technical field related to semiconductors, in particular to a method and device for improving wafer etching uniformity. Background technique [0002] At present, semiconductor epitaxial layer removal technology is mainly based on MOCVD equipment. Existing MOCVD equipment such as figure 1 shown. The working principle of this machine to remove the semiconductor epitaxial layer is as follows: the furnace wire 120 is heated to 700-800°C to provide energy to the etching gas in the cavity 100, and the etching gas is generally boron trichloride (BCl 3 ), trifluoromethane (CHF 3 ), etc., etc., the etching gas produces chemically active molecular clusters, which diffuse to the surface of the semiconductor epitaxial layer and chemically react with the semiconductor epitaxial layer to remove the semiconductor epitaxial layer and achieve the purpose of recycling the substrate. Row device 140 is excluded. The upper part of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01L21/67069
Inventor 苏贤达李彬彬霍曜李瑞评梅晓阳王兴林吴福仁段学超
Owner FUJIAN JING AN OPTOELECTRONICS CO LTD
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