A Gan-based narrow-band emission resonant cavity light-emitting diode and its manufacturing method

Abstract

A GaN-based narrow-band emission resonant cavity light-emitting diode and a manufacturing method thereof relate to the field of semiconductor light-emitting devices. Including a first reflector, a top metal electrode, a first cavity, a light-emitting active region, a second cavity, a second reflector, and a conductive substrate; the first reflector is a reflector of a Fabry-Perot filter structure, Contains n pairs of high-low dielectric coatings and n pairs of low-high dielectric coatings, the reflectivity value is lower at the designed center wavelength λ, and higher at other wavelengths, and its reflectivity curve has a light transmittance at λ Concave belt; the second reflector is a metal reflector with high reflectivity; wherein, the first reflector, the first cavity, the light-emitting active area, the second cavity and the second reflector together form a resonant cavity, and the active The area luminescence is transmitted back and forth in the resonant cavity. Under the regulation of the light-transmitting concave band in the reflectance curve of the first reflector to the reflected light, the GaN-based narrow-band emission resonant cavity light-emitting diode realizes single longitudinal mode narrow-band emission at a specific central wavelength λ. .

Description

technical field [0001] The invention relates to the field of semiconductor light-emitting devices, in particular to a GaN-based narrow-band emission resonant cavity light-emitting diode and a manufacturing method thereof. Background technique [0002] GaN belongs to the third-generation wide-bandgap semiconductor material. The bandgap width of alloy materials composed of GaN and AlN and InN can be continuously adjusted between 0.7 and 6.2eV, covering the spectral range from infrared to ultraviolet. ideal material for devices. In recent years, the Resonant Cavity Light Emitting Diode (RCLED) based on GaN material has received widespread attention as a new type of high-efficiency semiconductor optoelectronic device. [0003] RCLED is a special structure LED with the active region placed in the Fabry-Perot optical resonant cavity. Its device structure and performance have many similarities with vertical cavity surface emitting lasers and traditional LEDs. Compared with vertic...

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Problems solved by technology

Although the devices made of the above types of mirrors have obtained good device performance, the high reflection bands of these types of mirrors are relatively wide, and they have no screening effect on the outgoing light. In addition, the wide gain spectrum characteristics of semiconductor materials lead to The spectral width of the outgoing light is relatively wide, and it mostly presents multi-longitudinal mode light output, which is not conducive to the application in some occasions that require narrow linewidth

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