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Heat shield structure for single crystal production furnace, and single crystal production furnace

A single crystal and growth furnace technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as uneven temperature gradients, improve quality uniformity, achieve pull speed control, and high heat reflection efficiency Effect

Active Publication Date: 2020-10-13
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing heat shield design still has the defect of uneven temperature gradient

Method used

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  • Heat shield structure for single crystal production furnace, and single crystal production furnace
  • Heat shield structure for single crystal production furnace, and single crystal production furnace
  • Heat shield structure for single crystal production furnace, and single crystal production furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] refer to figure 1 and Figure 4 , a heat shield structure for a single crystal production furnace, wherein the heat shield structure 8 is used to be arranged on the upper part of the melt crucible 6 of the single crystal growth furnace, the heat shield structure 8 includes a shell 2 and a heat shield 1, and the heat shield 1 is located inside the shell 2, the outer surface of the bottom of the shell 2 is used to face the inside of the melt crucible 6, and the angle formed by the plane where the heat shield 1 is located and the plane where the bottom of the shell 2 is located is an acute angle, and the included angle faces the outside of the monocrystalline silicon 7 surface. By changing the design of the heat shield and adding a heat shield to transfer the heat dissipated from the melt to the single crystal silicon, that is, a heat channel is formed in the heat shield structure to optimize the radial temperature gradient of the single crystal silicon, thereby realizing...

Embodiment 2

[0043] The difference between this embodiment and Embodiment 1 lies in that the position where the heat insulation board 1 is placed is different. Such as figure 2 As shown, in this embodiment, the heat insulation board 1 is arranged inside the inner shell 3 . The heat shield structure 8 includes an outer shell 2 and a heat shield 1. The heat shield 1 is arranged inside the outer shell 2 and inside the inner shell 3. The outer surface of the bottom of the outer shell 2 is used to face the inside of the melt crucible 6. The heat shield 1 The included angle formed by the plane where it is located and the plane where the bottom of the housing 2 is located is an acute angle, and the included angle faces the outer surface of the single crystal silicon 7 . The included angle between the plane where the heat insulating board 1 is located and the horizontal plane is 30 degrees. In other embodiments, the included angle between the plane where the heat insulating board 1 is located an...

Embodiment 3

[0047] The difference between this embodiment and the previous embodiments is that a heat absorbing plate is added in the heat shield structure. Such as image 3 As shown, a heat shield structure for a single crystal production furnace, wherein the heat shield structure 8 is used to be arranged on the upper part of the melt crucible 6 of the single crystal growth furnace, the heat shield structure 8 includes a shell 2 and a heat shield 1, and the heat shield structure 8 includes a shell 2 and a heat shield 1. The hot plate 1 is arranged inside the shell 2, the outer surface of the bottom of the shell 2 is used to face the inside of the melt crucible 6, and the angle formed by the plane where the heat shield 1 is located and the plane where the bottom of the shell 2 is located is an acute angle and the angle faces the monocrystalline silicon 7 of the outer surface.

[0048] It also includes a heat absorbing plate 5 and an inner shell 3, the inner shell 3 is arranged inside the...

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Abstract

The invention discloses a heat shield structure for a single crystal production furnace. The heat shield structure is used for being arranged on the upper portion of a melt crucible of the single crystal silicon growth furnace. The heat shield structure comprises a shell and a heat insulation plate, the heat insulation plate is arranged in the shell, the outer surface of the bottom of the shell isused for facing the interior of the melt crucible, and the included angle formed between the plane where the heat insulation plate is located and the plane where the bottom of the shell is located isan acute angle and faces the outer surface of the single crystal silicon. The invention aims to provide the heat shield structure for the single crystal production furnace, and the single crystal production furnace. The structure is simple, heat absorbed by a heat absorption plate is transferred to the single crystal silicon by changing the design of the heat shield and additionally arranging theheat insulation plate to form a heat channel in the heat shield, and the radial temperature gradient of the single crystal silicon is optimized, so control over the pulling rate is achieved, and theradial quality uniformity of the single crystal silicon is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a heat shield structure for a single crystal production furnace and the single crystal production furnace. Background technique [0002] Monocrystalline silicon is the material basis for the sustainable development of modern information technology and communication technology, and plays an irreplaceable role. At present, the Czochralski method and the zone melting method used to grow single crystal silicon from the melt are the main methods of current single crystal silicon production. Since the production of monocrystalline silicon by the Czochralski method has the advantages of simple equipment and process, easy automatic control, high production efficiency, easy preparation of large-diameter monocrystalline silicon, fast crystal growth speed, high crystal purity and high integrity, the Czochralski method It is the most commonly used and most impo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06C30B15/14C30B15/10
Inventor 薛忠营魏涛魏星栗展刘赟李名浩
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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