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A heat shield device for a single crystal production furnace, a control method and a single crystal production furnace

A single crystal and single crystal silicon technology, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as uneven temperature gradient, achieve radial temperature gradient optimization, high heat reflection efficiency, and increase efficiency Effect

Active Publication Date: 2021-10-19
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing heat shield design still has the defect of uneven temperature gradient

Method used

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  • A heat shield device for a single crystal production furnace, a control method and a single crystal production furnace
  • A heat shield device for a single crystal production furnace, a control method and a single crystal production furnace
  • A heat shield device for a single crystal production furnace, a control method and a single crystal production furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] refer to figure 1 , figure 2 and Figure 8 , a heat shield device for a single crystal production furnace, the heat shield device 16 is used to be arranged on the upper part of the melt crucible 15 of a single crystal silicon growth furnace, and the heat shield device 16 includes a housing 1, a support member 2, and a heat shield 3 and the direction control assembly 4, the support 2 and the heat shield 3 are set in the housing 1, one end of the support is fixedly connected to the inner wall of the housing, the direction control assembly 4 is connected to the heat insulation board 3, and the support 2 is used as The fulcrum of the heat shield 3 cooperates with the direction control assembly 4 to control the relative rotation between the heat shield 3 and the housing 1, the rotatable angle of the heat shield 3 faces the cylindrical surface of the monocrystalline silicon 14, and the bottom of the housing 1 The surface is intended to be towards the inside of the melt cru...

Embodiment 2

[0061] The difference between this embodiment and Embodiment 1 is that a heat absorbing plate is added. Such as image 3 As shown, a heat shield device for a single crystal production furnace, the heat shield device 16 is used to be arranged on the upper part of the melt crucible 15 of a single crystal silicon growth furnace, and the heat shield device 16 includes a housing 1, a support member 2, a partition The heat plate 3 and the direction control assembly 4, the support 2 and the heat shield 3 are arranged in the casing 1, one end of the support is fixedly connected with the inner wall of the casing, the direction control assembly 4 is connected with the heat insulation plate 3, and the support 2 is used As the fulcrum of the heat shield 3 and cooperate with the direction control assembly 4 to control the relative rotation between the heat shield 3 and the housing 1, the rotatable angle of the heat shield 3 faces the cylindrical surface of the monocrystalline silicon 14, a...

Embodiment 3

[0063] The difference between this embodiment and Embodiment 1 lies in that the number of support members 2 and their positions, as well as the position of the direction control assembly in this embodiment are different. In this embodiment, the structure of the housing 1 is an annular structure with a cavity inside, the shape of the heat shield 3 is a fan ring, and the number of the heat shield 3 is 2, and the central angle of the sector of the two heat shields is Both are 180 degrees, set in the shell 1, when the two heat shields are in a horizontal state, they are located on the same horizontal plane and there is no overlapping area between them, a support that matches a single heat shield 3 There are 2, ie a total of 4 supports. The point where one end of the support member 2 contacts the heat insulation board 3 is the fulcrum of the heat insulation board 3 , and the contact point can be on the upper surface or the lower surface of the heat insulation board 3 . Two support...

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Abstract

The invention discloses a heat shield device for a single crystal production furnace, the heat shield device is used to be arranged on the upper part of the melt crucible of the single crystal silicon growth furnace, and the heat shield device includes a shell and a support , a heat shield and a direction control assembly, the support and the heat shield are arranged in the housing, one end of the support is fixedly connected to the inner wall of the housing, the direction control assembly is connected to the insulation The heat shield is connected, the support is used as the fulcrum of the heat shield and cooperates with the direction control assembly to control the relative rotation between the heat shield and the housing, the rotatable heat shield The included angle faces the cylindrical surface of the single crystal silicon, and the outer surface of the bottom of the housing is used to face the inside of the melting crucible. The object of the present invention is to provide a heat shield device for single crystal production furnace and single crystal production furnace, by changing the design of the heat shield, by controlling the direction and angle of the heat shield to realize the dynamic control of the temperature gradient, so as to realize the pulling speed control.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing equipment, in particular to a heat shield device for a single crystal production furnace, a control method and a single crystal production furnace. Background technique [0002] Monocrystalline silicon is the material basis for the sustainable development of modern information technology and communication technology, and plays an irreplaceable role. At present, the Czochralski method and the zone melting method used to grow single crystal silicon from the melt are the main methods of current single crystal silicon production. Since the production of monocrystalline silicon by the Czochralski method has the advantages of simple equipment and process, easy automatic control, high production efficiency, easy preparation of large-diameter monocrystalline silicon, fast crystal growth speed, high crystal purity and high integrity, the Czochralski method It is the most commonly used ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/06C30B15/20
CPCC30B15/00C30B29/06C30B15/203C30B15/14C30B15/20Y10T117/10Y10T117/1068
Inventor 薛忠营李名浩魏星栗展魏涛刘赟
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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