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Structure for testing hot hole effect of compound MISFET device, and characterization method thereof

A technology for testing structures and hot holes, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc. Hole and other issues

Active Publication Date: 2020-09-15
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, when hot hole stress is applied to P-channel compound MISFET devices with conventional structures, due to the potential difference from the drain to the source, the distribution of hot holes in the channel is not uniform, and the number of holes in the channel and The accelerating electric field strength is simultaneously related to the applied gate-source voltage and gate-drain voltage bias
Therefore, when hot hole stress is only applied to conventional structural compound MISFET devices, it is impossible to achieve uniform injection of hot holes into the insulating layer, and it is also impossible to independently study the influence of hot hole injection quantity and injection energy on device performance degradation. The mechanism of hot cavitation effect lacks in-depth research and characterization

Method used

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  • Structure for testing hot hole effect of compound MISFET device, and characterization method thereof
  • Structure for testing hot hole effect of compound MISFET device, and characterization method thereof
  • Structure for testing hot hole effect of compound MISFET device, and characterization method thereof

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Embodiment 1

[0057] See figure 1 and figure 2 , figure 1 A schematic diagram of the test structure for the hot hole effect of a compound MISFET device provided by the present invention; figure 2 It is a schematic structural diagram of a compound MISFET device provided by the present invention. This embodiment takes a compound MISFET device as an example, such as figure 1 shown. A test structure for the hot hole effect of a compound MISFET device, comprising: a substrate 1, an N-type epitaxial layer 2, an insulating layer 3, a passivation layer 4, a gate 5, a first P+ doped region 6, a source 7, Drain 8, N+ doped region 9, second P+ doped region 10, electrode A11 and electrode B12; wherein,

[0058] The N-type epitaxial layer 2 is located on the substrate 1;

[0059] The insulating layer 3 is located on the N-type epitaxial layer 2;

[0060] The gate 5 is located on the insulating layer 3;

[0061] The two first P+ doped regions 6 are correspondingly distributed in the N-type epit...

Embodiment 2

[0072] Please continue to see figure 1 , and see image 3 and Figure 4 . image 3 A schematic flow chart of the characterization method for the hot hole effect of a compound MISFET device provided by the present invention; Figure 4 It is a schematic circuit connection schematic diagram of a method for characterization of the hot hole effect of a compound MISFET device provided by the present invention. On the basis of the above-mentioned embodiments, this embodiment focuses on the detailed description of the hot hole effect characterization method based on the compound MISFET device, such as image 3 shown. Specifically, the following steps are included:

[0073] Obtaining the first characteristic and the second characteristic of the device under test through a hot hole stress experiment;

[0074] According to the first characteristic and the second characteristic, obtain the result of the influence of the hot hole stress experiment on the characteristics of the device...

Embodiment 3

[0098] Please continue to see figure 1 , figure 2 , image 3 and Figure 4 , and see Figure 5 , Figure 6 a-6b and Figure 7 a-7b, Figure 8 a-8b, Figure 5 A flowchart for realizing the characterization method of the hot hole effect of a MISFET device provided by the present invention; Figure 6 Provide the present invention with a graph of the degradation of the output characteristics and transfer characteristics of the device under test with different hot hole injection quantities; Figure 7 Provide the present invention with curves of the degradation of the output characteristics and transfer characteristics of the device under test with different hot hole injection energies; Figure 8 The present invention provides graphs of the degradation of the output characteristics and transfer characteristics of the device under test as they vary with different gate voltages. This embodiment describes the characterization method in detail on the basis of the above embodim...

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Abstract

The invention relates to a structure for testing the hot hole effect of a compound MISFET device. The structure comprises a substrate (1), an N type epitaxial layer (2), an insulating layer (3), a passivation layer (4), a gate (5), a first P+ doped region (6), a source electrode (7), a drain electrode (8), an N+ doped region (9), a second P+ doped region (10), an electrode A (11) and an electrodeB (12). The embodiment of the invention provides a structure for testing a hot hole effect of a compound MISFET device by a hot hole injection quantity and energy controllable technology, and a characterization method thereof, wherein the injection quantity of hot holes in an insulating layer is controlled by adjusting a voltage Va and a voltage Vb, and the injection energy of the hot holes in theinsulating layer is controlled by adjusting the voltage Va, so that the problems that the injection quantity and the injection energy of the hot holes of the device are uncontrollable, the insulatinglayer is non-uniformly injected and the like are solved, and the deep analysis of the hot hole effect in the heterojunction device is facilitated.

Description

technical field [0001] The invention belongs to the technical field of microelectronic reliability characterization, and in particular relates to a test structure and a characterization method for the hot hole effect of a compound MISFET device. Background technique [0002] From the first-generation semiconductor materials represented by silicon materials to the second-generation semiconductor materials represented by gallium arsenide materials, to the third-generation semiconductor materials represented by gallium nitride, the material properties have become more and more excellent. High-performance semiconductor devices and even integrated circuits provide a solid material foundation. In particular, the third-generation wide-bandgap semiconductor materials have excellent characteristics such as high breakdown field strength, high thermal conductivity, and high electron saturation drift speed. Semiconductor devices based on them can operate at high power, high frequency, h...

Claims

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Application Information

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IPC IPC(8): H01L21/66
CPCH01L22/14H01L22/30
Inventor 郑雪峰马晓华李纲朱甜王小虎郝跃
Owner XIDIAN UNIV
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