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A kind of preparation method of low magnetic hysteresis tunnel junction magnetic sensor

A magnetic tunnel junction and tunnel junction technology, applied in the field of magnetic sensors, can solve the problems such as the difficulty of reducing the magnetic hysteresis of the sensitive body, and achieve the effects of eliminating the formation of short-circuit channels, improving the sensitivity, and improving the success rate of preparation.

Active Publication Date: 2022-07-26
NAT UNIV OF DEFENSE TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Magnetic concentrators are often made of soft magnetic materials with higher magnetic permeability, which can be gathered, and the magnetic hysteresis of the magnetic tunnel junction sensitive body is difficult to reduce

Method used

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  • A kind of preparation method of low magnetic hysteresis tunnel junction magnetic sensor
  • A kind of preparation method of low magnetic hysteresis tunnel junction magnetic sensor
  • A kind of preparation method of low magnetic hysteresis tunnel junction magnetic sensor

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Embodiment 1

[0042] Using silicon dioxide as the substrate, through the background vacuum of 10 -6 The magnetron sputtering method of Pa, prepared such as figure 1 The low hysteresis tunnel junction magnetic susceptor shown, from bottom to top, sequentially includes a substrate 1, a buffer layer 21 (seed layer), a bottom electrode layer 30, a tunneling barrier layer 4, a first top electrode layer 50, and a second top electrode layer 50. The magnetization directions of the electrode layer 54 , the insulating layer 6 , the plating seed layer 71 and the plating layer 72 , and the bottom electrode layer 30 are perpendicular to the magnetization direction of the first top electrode layer 50 and the second top electrode layer 54 (or the plating layer 72 ). in:

[0043] The buffer layer 21 is a seed layer separated from each other by Ta / Ru;

[0044] The bottom electrode layer 30 includes, from bottom to top, a PtMn antiferromagnetic layer 31 with a thickness of 20 nm, a CoFe ferromagnetic layer...

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Abstract

The invention discloses a method for preparing a low magnetic hysteresis tunnel junction magnetic susceptor. During the third annealing, the direction of the applied magnetic field is the same as the direction of the second annealing, and the invention effectively suppresses the hysteresis of the output response of the tunnel junction magnetoresistance sensitive body.

Description

technical field [0001] The invention relates to the field of magnetic sensors, in particular to a preparation method of a low-hysteresis tunnel junction magnetic sensor. Background technique [0002] Magnetoresistive sensors have attracted widespread attention due to their high sensitivity, low energy consumption, low cost, and miniaturization, and play an important role in biomedicine, industrial manufacturing, geophysics, and aerospace. Among them, the tunnel junction magnetoresistance sensor has always been one of the hotspots in the research of magnetoresistance sensor due to its higher rate of change of magnetoresistance. Affected by the material properties, the magnetic susceptor of the tunnel junction has hysteresis behavior, which seriously affects the weak magnetic detection ability of the sensor. At present, by changing the shape and size of the free layer or applying a magnetic field bias to construct a structure in which the easy axes of the free layer and the r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/12H10N50/10H10N50/01
CPCH10N50/01H10N50/10
Inventor 胡佳飞李裴森冀敏慧潘孟春彭俊平邱伟成陈棣湘姚馨平
Owner NAT UNIV OF DEFENSE TECH
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