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Self-aligned double patterning method

A double patterning and self-alignment technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of complex process and high requirements of photolithography process, and achieve simplified process flow, cost saving and small pattern spacing Effect

Inactive Publication Date: 2020-08-28
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for self-aligned double patterning, which is used to solve the problem of high requirements on photolithography process and complex process in the prior art when the pattern is miniaturized

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Embodiment Construction

[0034] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0035] see Figure 1 to Figure 9 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention provides a self-alignment double patterning method. The method comprises the steps of forming a silicon-containing filling material layer, an anti-reflection layer and a photoresist pattern on a to-be-etched layer; taking the photoresist pattern as a mask, etching the silicon-containing filling material layer and carrying out heat treatment on the silicon-containing filling materiallayer to shrink the silicon-containing filling material pattern so as to form a silicon dioxide pattern; depositing an etching mask layer and performing back etching, and forming a side wall on the side wall of the silicon dioxide pattern; removing the silicon dioxide pattern; and etching the to-be-etched layer to form a target pattern. According to the invention, the characteristic that the silicon-containing filling material shrinks after high-temperature heat treatment is utilized to obtain a smaller pattern spacing compared with the traditional self-alignment double patterning process, sothat the miniaturization of a semiconductor device is facilitated; and the characteristic that the silicon-containing filling material generates silicon dioxide after high-temperature heat treatment is utilized, and the silicon-containing filling material can be used as a sacrificial layer in a self-alignment double patterning method, so that the steps of growing, etching and removing the sacrificial layer in the traditional process are omitted, the process flow is simplified, and the cost is saved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for self-alignment double patterning. Background technique [0002] The increasing integration of semiconductor devices is driving the technology nodes of the semiconductor manufacturing process forward. For the technology nodes of 14nm and below, the single-patterning technology using the deep ultraviolet (DUV) lithography process can no longer meet the requirements. , but must use extreme ultraviolet (EUV) lithography process or double patterning (Double Patterning) technology, and as a kind of double patterning technology, self-aligned double patterning (Self-aligned Double Patterning, SADP) technology uses only one light Compared with the traditional double patterning technology, the photolithography process is used once less, which has a certain cost advantage. Therefore, the self-aligned double patterning technology is gradually being adopted by the industry...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/308H01L21/311H01L21/3213
CPCH01L21/3086H01L21/31105H01L21/31144H01L21/32139
Inventor 郭晓波
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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