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A high-purity and high-density a/b-site multi-ion co-doped bismuth ferrite-based ceramic and its preparation method

A bismuth ferrite-based, multi-ion technology, applied in the field of bismuth ferrite-based ceramics and its preparation, can solve the problems of poor phase purity, large ceramic leakage current, and low densification degree of bismuth ferrite ceramics, so as to facilitate the densification of ceramics Minimize and refine powder size, good fluidity

Active Publication Date: 2022-02-22
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the poor phase purity and low densification degree of the bismuth ferrite ceramics synthesized by the existing method, and then lead to the problems of large ceramic leakage current and too small ferroelectric polarization, and provide a high-purity and high-density A / B-site multi-ion co-doped bismuth ferrite-based ceramics and preparation method thereof

Method used

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  • A high-purity and high-density a/b-site multi-ion co-doped bismuth ferrite-based ceramic and its preparation method
  • A high-purity and high-density a/b-site multi-ion co-doped bismuth ferrite-based ceramic and its preparation method
  • A high-purity and high-density a/b-site multi-ion co-doped bismuth ferrite-based ceramic and its preparation method

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specific Embodiment approach 1

[0040] Embodiment 1: This embodiment is a high-purity and high-density A / B-site multi-ion co-doped bismuth ferrite-based ceramics. The general chemical formula is: Bi 1-x Re x Fe 1-y B y o 3 , wherein 0

specific Embodiment approach 2

[0041] Specific embodiment two: This embodiment is a preparation method of a high-purity and high-density A / B-position multi-ion co-doped bismuth ferrite-based ceramics, which is completed in the following steps:

[0042] 1. Weighing:

[0043] ①, according to the general chemical formula Bi 1-x Re x Fe 1-y B y o 3 Weigh bismuth oxide, iron oxide, rare earth oxide and high-valent transition metal oxide powder; where 0

[0044] ②, weigh bismuth oxide again;

[0045] The molar ratio of the bismuth oxide weighed in step 1.2 to the bismuth oxide weighed in step 1. is (0.01~0.1):1;

[0046] ③. Put the bismuth oxide, iron oxide, rare earth oxide and transition metal oxide powder weighed in step 1 ① and step 1 ② into the ball mill pot, then add ball milling medium absolute ethanol and balls, and use a high-energy planetary ball mill Grinding balls and mixing to obtain a ball-milled mixture;

[0047] 2. Dry the mixture after ball mill...

specific Embodiment approach 3

[0059] Specific embodiment three: the difference between this embodiment and specific embodiment two is: the ball-to-material ratio in described step 1.3. It is 12h ~ 24h.

[0060] Other steps are the same as in the second embodiment.

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Abstract

A high-purity and high-density A / B-site multi-ion co-doped bismuth ferrite-based ceramic and a preparation method thereof relate to a multi-ion co-doped bismuth ferrite-based ceramic with high ferroelectric performance and a preparation method thereof. The purpose of the invention is to solve the problems of poor phase purity and low densification degree of the bismuth ferrite ceramic synthesized by the existing method, which further lead to large ceramic leakage current and too small ferroelectric polarization. The general chemical formula of a high-purity and high-density A / B-site multi-ion co-doped bismuth ferrite-based ceramic is: Bi 1‑x Re x Fe 1‑y B y o 3 ; Preparation method: 1. weighing; 2. drying and sieving; The bismuth ferrite-based ceramic prepared by the invention has high purity and density, and at the same time, the leakage current is small, and exhibits excellent ferroelectric performance. The invention can obtain a high-purity and high-density bismuth ferrite-based ceramics.

Description

technical field [0001] The invention relates to a multi-ion co-doped bismuth ferrite-based ceramic with high ferroelectric performance and a preparation method thereof. Background technique [0002] Bismuth ferrite (BiFeO 3 ) as the only room-temperature single-phase multiferroic material has attracted extensive attention due to its simultaneous ferroelectricity and antiferromagnetism. Theoretical studies show that the Curie temperature Tc of bismuth ferrite is about 830°C, and the antiferromagnetic Neel temperature Tc N At about 370°C, the spontaneous polarization is about 100μC cm -2 , which makes it the preferred multiferroic material that can be applied at room temperature. The mutual regulation of magnetism and electricity in multiferroic materials has a very good application prospect in devices such as converters, oscillators, memories, especially multi-state memories. [0003] However, there are still some difficulties in the current research on bismuth ferrite, m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/40C04B35/622C04B35/626C04B35/634C04B35/638C04B35/64
CPCC04B35/2675C04B35/622C04B35/62615C04B35/62655C04B35/62695C04B35/63416C04B35/638C04B35/64C04B2235/3298C04B2235/3224C04B2235/3232C04B2235/3244C04B2235/3256C04B2235/6562C04B2235/6565C04B2235/6567C04B2235/6585C04B2235/96
Inventor 柯华田晶鑫罗蕙佳代曹璐唐晓慧邢苗张洪军
Owner HARBIN INST OF TECH
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