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Resistive random access memory and manufacturing method thereof

一种电阻式随机、存取存储器的技术，应用在电固体器件、电路、电气元件等方向，能够解决电阻式随机存取存储器集成度限制等问题，达到提升集成度、降低体积的效果

Active Publication Date: 2020-08-25
POWERCHIP SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Since the resistive random access memory needs to be provided with a selection element such as a MOS to control the flow path of the current to avoid read errors caused by the sneak current (sneak current) of the resistive random access memory, the size of the resistive random access memory is due to the size of the element The design relationship cannot be further reduced, which limits the integration of resistive random access memory

Method used

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  • Resistive random access memory and manufacturing method thereof
  • Resistive random access memory and manufacturing method thereof
  • Resistive random access memory and manufacturing method thereof

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Embodiment Construction

[0058]Some embodiments are listed below and described in detail with the accompanying drawings, but the provided embodiments are not intended to limit the scope of the present invention. In addition, the drawings are for illustration purposes only and are not drawn to original scale. In order to facilitate understanding, the same elements in the following description will be described with the same symbols. In addition, terms such as "comprising", "including", and "having" used in the text are all open terms; that is, including but not limited to. Moreover, the directional terms mentioned in the text, such as: "up", "down", etc., are only used to refer to the directions of the drawings. Accordingly, the directional terms used are for the purpose of description, not limitation of the invention.

[0059] figure 2 is a schematic cross-sectional view of a resistive random access memory according to the first embodiment of the present invention. image 3 yes figure 2 An enla...

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Abstract

A resistive random access memory and a manufacturing method thereof are disclosed. The resistive random access memory includes a stacked structure, at least one vertical electrode, a selector element,and a plurality of resistance changeable structures. The stacked structure is formed by a plurality of horizontal electrodes and a plurality of first dielectric layers stacked alternately, wherein the stacked structure has at least one channel hole extending through the horizontal electrodes and the first dielectric layers. The vertical electrode is formed in the at least one channel hole. The selector element is formed in the channel hole between the vertical electrode and the stacked structure. The resistance changeable structures are disposed on the surface of each of the horizontal electrodes and are in contact with the selector element in the channel hole.

Description

technical field [0001] The present invention relates to a random access memory and its manufacturing method, and in particular to a resistive random access memory and its manufacturing method. Background technique [0002] Because resistive random access memory (resistive random access memory, RRAM) has superior scalability (scalability), ease of operation, low power consumption and relatively simple manufacturing process, it has become the most promising non-volatile memory. One of the sexual memory technologies. [0003] Such as figure 1 As shown, the present resistive random access memory 100 mostly has a vertical electrode 102, a variable resistance layer 104, a horizontal electrode 106, a bit line 108, and a word line 110 made of MOS. The variable resistance layer 104 is formed between the vertical electrodes 102 and the horizontal electrodes 106, and each vertical electrode 102 is connected to the bit line 108 to perform charge interpretation, and the word line 110 i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11568
CPCH10B43/30H10B63/24H10B63/34H10B63/845H10B63/20H10N70/823H10N70/20H10N70/883H10B63/30H10N70/841
Inventor 王子嵩
Owner POWERCHIP SEMICON MFG CORP
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