Manufacturing method of advanced node rear-section metal through hole

Abstract

The invention discloses a manufacturing method of an advanced node rear-section metal through hole. The method comprises: manufacturing a first metal layer through a self-alignment dual imaging or Damascus process; sequentially depositing a cover layer, an etching stop layer and a low-k dielectric layer on a substrate; manufacturing a second metal channel through self-alignment dual imaging or Damascus process again; combing a plurality of through holes into a rectangle; etching by utilizing a load effect; after an etching stop layer is etched, removing the etching stop layer through a wet method, and etching the over layer; opening the through holes, and enlarging a process window; and finally carrying out metal filling on the second metal channel and the through holes through a Damascusprocess to complete the through hole manufacturing. According to the invention, the process window is enlarged, and the yield is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a method for manufacturing advanced node rear-stage metal vias. Background technique [0002] Due to strict design rules, the via holes on two or three adjacent metal lines need to be pattern split into two or three photolithographic masks, which greatly affects the process efficiency. The cost is increased, and the open size of the hard mask is extremely small after the photolithography process, and it is easy to cause the problem of incomplete opening of the via hole and the disconnection between the metal lines in the etching process, resulting in defects and process windows. Small, affecting the yield. Contents of the invention [0003] The purpose of the present invention is to provide a method for manufacturing through-holes in the back stage of advanced nodes, which can expand the process window and improve the yield. [0004] In order to achi...

AI Technical Summary

Problems solved by technology

[0002] Due to strict design rules, the via holes on two or three adjacent metal lines need to be pattern split into two or three photolithographic masks, which greatly affects the process efficiency. The cost is increased, and the open size of the hard mask is extremely small after the photolithography process, and it is easy to cause the problem of incomplete opening of the via hole and the disconnection between the metal lines in the etching process, resulting in defects and process windows. Small, affecting the yield

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