Graphene mid-infrared light detector based on plasmon enhancement and preparation method

Abstract

The invention discloses a graphene mid-infrared light detector based on plasmon enhancement, and belongs to the technical field of mid-infrared light detection. The graphene mid-infrared light detector comprises a silicon substrate, a silicon dioxide layer, a graphene micro-nano array and a dielectric layer which are sequentially stacked from bottom to top, wherein the graphene micro-nano array and the dielectric layer are positioned in the middle of the silicon dioxide layer; the surfaces of the silicon dioxide layer and the dielectric layer are covered with a graphene layer; and a first electrode and a second electrode are arranged on the two sides of the graphene layer respectively. According to the infrared detector manufactured by using the structure, the photoelectric conversion efficiency is greatly improved, the preparation method is simple, the infrared detector is compatible with the existing silicon process, the problems of continuous low-temperature refrigeration, high energy consumption, weak signal and the like of the traditional infrared detector using mercury cadmium telluride, indium antimonide and the like are solved, and the operation cost performance is greatlyimproved.

Description

technical field [0001] The invention belongs to the technical field of mid-infrared light detection, in particular to a graphene mid-infrared light detector based on plasmon enhancement. Background technique [0002] High-performance infrared photodetectors are the core of diverse optoelectronic applications such as spectroscopy, remote sensing, imaging, and optical communications. Irreplaceable role; With the development of optoelectronic technology and the increasing demand for infrared detection, one of the important development trends of current infrared detectors is to combine infrared sensing materials with traditional and mature silicon-based chip circuits to realize complex signal processing functions; traditional InGaAs, GaAs / AlGaAs quantum wells, and InAs / GaSb superlattice infrared detectors are difficult to prepare high-quality thin films, which are different from traditional silicon-based semiconductor processes Compatibility and other issues; cooling infrared d...

AI Technical Summary

Problems solved by technology

[0004] Considering the low single-light absorption rate (~2.3%) of single-layer graphene, the prepared mid-infrared photodetectors generally have shortcomings such as large dark current and low signal-to-noise ratio; using graphene micro-nano arrays as plasmonic polaritons Strengthening materials to improve the absorption of graphene films in the mid-infrared band, designing a new structure based on plasmon-enhanced graphene mid-infrared light detectors, has important practical application prospects

Images