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Chemical method for rapidly synthesizing silver sulfide film at normal temperature

A chemical method, silver sulfide technology, applied in the field of material chemistry, can solve problems such as difficult to quickly prepare large-area, high-quality thin films, and achieve the effects of large-scale preparation, avoiding influence, and controllable patterns

Inactive Publication Date: 2020-08-14
XUCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The problem to be solved by the present invention is to provide a rapid large-area preparation of silver sulfide semiconductor thin film for the problem that it is difficult to quickly prepare large-area and high-quality thin films under normal temperature conditions in the silver sulfide thin film preparation methods reported in the prior art. chemistry of materials

Method used

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  • Chemical method for rapidly synthesizing silver sulfide film at normal temperature
  • Chemical method for rapidly synthesizing silver sulfide film at normal temperature
  • Chemical method for rapidly synthesizing silver sulfide film at normal temperature

Examples

Experimental program
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Effect test

Embodiment 1

[0030] 1. Preparatory work: use the method of magnetron sputtering to sputter a 100nm-thick elemental silver film on the surface of the polyimide film (in this embodiment, use film thickness monitoring to control the film thickness) for use. Preparation of ammonium polysulfide solution: Weigh 0.1 g of sulfur powder and add it to 10 mL of ammonium sulfide aqueous solution (40-48 wt %), stir until the sulfur powder is completely dissolved, and obtain a clear and transparent ammonium polysulfide aqueous solution for use.

[0031] 2. Reaction steps: Put the substrate material sputtered with a 100nm elemental silver film into the prepared ammonium polysulfide aqueous solution, and react at room temperature and pressure for 20s, and the silver-white elemental silver film is completely transformed into a gray-black silver sulfide film. The formed film was not seen to be detached from the substrate surface during the reaction. The prepared silver sulfide film was carefully cleaned in ...

Embodiment 2

[0033] 1. Preparatory work: use the method of magnetron sputtering to sputter a 100nm-thick elemental silver film on the surface of the polyimide film (in this embodiment, use film thickness monitoring to control the film thickness) for use. Preparation of ammonium polysulfide solution: Weigh 0.2 mg of sulfur powder and add it to 10 mL of ammonium sulfide aqueous solution (40-48 wt %), stir until the sulfur powder is completely dissolved, and obtain a clear and transparent ammonium polysulfide aqueous solution for use.

[0034] 2. Reaction steps: Put the substrate material sputtered with a 100nm elemental silver film into the prepared ammonium polysulfide aqueous solution, and react at room temperature and pressure for 20s, and the silver-white elemental silver film is completely transformed into a gray-black silver sulfide film. The formed film was not seen to be detached from the substrate surface during the reaction. The prepared silver sulfide film was carefully cleaned in...

Embodiment 3

[0036] 1. Preparatory work: use the method of magnetron sputtering to sputter a 300nm thick elemental silver film on the surface of the polyimide film (in this embodiment, use film thickness monitoring to control the film thickness) for use. Preparation of ammonium polysulfide solution: Weigh 0.3g of sulfur powder and add it to 10mL of ammonium sulfide aqueous solution (40-48wt%), stir until the sulfur powder is completely dissolved, and obtain a clear and transparent ammonium polysulfide aqueous solution for use.

[0037] 2. Reaction steps: Put the substrate material sputtered with a 300nm elemental silver film into the prepared ammonium polysulfide aqueous solution, and react for 50s at normal temperature and pressure, and the silver-white elemental silver film is completely transformed into a gray-black silver sulfide film. During the reaction, it can be seen that the formed film continuously peels off from the substrate surface. The prepared silver sulfide film was careful...

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Abstract

The invention relates to a chemical method for rapidly synthesizing a silver sulfide film at normal temperature. The method comprises the following steps of: enabling a substrate deposited with an elemental silver film to react with an ammonium polysulfide aqueous solution under the conditions of normal temperature and normal pressure to prepare a silver sulfide semiconductor film material on thesurface of a substrate material in situ. According to the method, under the conditions of normal temperature and normal pressure, the ammonium polysulfide reacts with the elemental silver thin film, the reaction speed is high, preparation of the silver sulfide thin film can be rapidly achieved under the condition that the reaction time is shorter than 1 min, and the obtained silver sulfide thin film is high in compactness and good in stability. And the thickness of the silver sulfide film can reach 300-1000 nm.

Description

technical field [0001] The invention belongs to the technical field of material chemistry, in particular to a chemical method for rapidly synthesizing silver sulfide thin films at normal temperature. Background technique [0002] Silver sulfide is a narrow-bandgap n-type semiconductor material with a forbidden band width of about 0.9eV, which can absorb sunlight in the near-infrared region. At present, this material has been widely used in the field of photoelectric conversion research, such as: thin-film solar cell devices, photodetectors, photocatalysis, photoluminescence, etc. [0003] At present, there are patent publications and related reports on the preparation of silver sulfide thin film materials. For example, the previous patent (201010111402.0) of our research group discloses a chemical method for in-situ synthesis of sheet-shaped silver sulfide nanocrystalline photoelectric thin films at low temperature: first, add sulfur powder and organic solvents into a clean...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22C23C14/20C23C14/35
CPCC03C17/22C03C2217/288C03C2218/156C03C2218/32C23C14/205C23C14/35
Inventor 雷岩谷龙艳陈洋郑直何伟伟贾会敏铁伟伟高远浩
Owner XUCHANG UNIV
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