Large-signal equivalent circuit model of composite strain Si/SiGe heterojunction bipolar transistor

Abstract

The invention discloses a large-signal equivalent circuit model of a composite strain Si / SiGe heterojunction bipolar transistor, and belongs to the technical field of semiconductor integrated circuits. The circuit model comprises an intrinsic NPN transistor unit, a parasitic substrate PNP transistor unit, a substrate matching network unit, a BE parasitic equivalent circuit unit, an emitter regionequivalent resistor, a base region parasitic equivalent resistor and a collector region equivalent resistor. According to the method, the physical nature of the heterojunction bipolar transistor device can be accurately reflected, the device characteristics are accurately simulated, parameters are few, the extraction process is simple, meanwhile, the established equivalent circuit model can be embedded into simulation software, and the method is suitable for simulating the simulation design of a high-frequency integrated circuit.

Description

technical field [0001] The invention relates to a compound strain Si / SiGe heterojunction bipolar transistor large-signal equivalent circuit model, which belongs to the technical field of semiconductor integrated circuits. Background technique [0002] Terahertz integrated circuits are the core of various solid-state terahertz system applications, and are a typical cross-research frontier field, which specifically involves two aspects of terahertz and integrated circuits. Among them, integrated circuit chips are the heart of the entire electronics industry, and in terms of millimeter-wave terahertz, the operating frequency of terahertz integrated circuits is thousands of times that of existing common integrated circuit chips. Design, processing, and testing are extremely challenging. As the core of terahertz integrated circuits, terahertz devices have become the key to the future development of information technology and semiconductor industry. [0003] Regarding terahertz ...

AI Technical Summary

Problems solved by technology

The design and implementation of silicon-based terahertz integrated circuits is carried out close to the cut-off frequency of transistors. Generally, the cut-off frequency of transistors is 300GHz-1THz. However, the results of existing models are still concentrated around dozens of GHz, which cannot accurately support the simulation of integrated circuits in the terahertz frequency band. design

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