A large-signal equivalent circuit model of a composite strained si/sige heterojunction bipolar transistor

An equivalent circuit model, heterojunction bipolar technology, applied in circuits, CAD circuit design, electrical components, etc., can solve problems such as the inability to accurately support the simulation design of integrated circuits in the terahertz frequency band, and achieve accurate device characteristics and extraction process. Simple, parameter-less effects

Active Publication Date: 2021-04-27
YANSHAN UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The design and implementation of silicon-based terahertz integrated circuits is carried out close to the cut-off frequency of transistors. Generally, the cut-off frequency of transistors is 300GHz-1THz. However, the results of existing models are still concentrated around dozens of GHz, which cannot accurately support the simulation of integrated circuits in the terahertz frequency band. design

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A large-signal equivalent circuit model of a composite strained si/sige heterojunction bipolar transistor
  • A large-signal equivalent circuit model of a composite strained si/sige heterojunction bipolar transistor
  • A large-signal equivalent circuit model of a composite strained si/sige heterojunction bipolar transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0028] Such as figure 1 As shown, it is a cross-sectional schematic diagram of a composite strained Si / SiGe heterojunction bipolar transistor. It consists of extrinsic base region 003, side wall oxide layer 004, P-type SiGe base region 005, Si cap layer 006, and polycrystalline Si emitter region 007. The upper ends of the N-type collector region 001 respectively form an extrinsic inner base region 002 and an embedded SiGe extrinsic outer base region 003, and through the embedded SiGe extrinsic outer base region 003, 002 and the N-type collector region 001 introduce uniaxial stress, and the middle part of the upper surface of the N-type collector region 001 forms a P-type SiGe base region 005, a Si cap layer 006, and a polycrystalline Si emitter region 007, thereby forming an intrinsic NPN For heterojunction bipolar transistors, the sidewall ox...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a compound strain Si / SiGe heterojunction bipolar transistor large-signal equivalent circuit model, which belongs to the technical field of semiconductor integrated circuits, and includes an intrinsic NPN transistor unit, a parasitic substrate PNP transistor unit, and a substrate matching network unit , BC parasitic equivalent circuit unit, BE parasitic equivalent circuit unit, and emitter, base and collector parasitic equivalent resistance. The invention can accurately reflect the physical nature of heterojunction bipolar transistor devices, accurately simulate device characteristics, and has few parameters and simple extraction process. At the same time, the established equivalent circuit model can be embedded in simulation software, and is suitable for simulating high-frequency integrated circuits Simulation design.

Description

technical field [0001] The invention relates to a compound strain Si / SiGe heterojunction bipolar transistor large-signal equivalent circuit model, which belongs to the technical field of semiconductor integrated circuits. Background technique [0002] Terahertz integrated circuits are the core of various solid-state terahertz system applications, and are a typical cross-research frontier field, which specifically involves two aspects of terahertz and integrated circuits. Among them, integrated circuit chips are the heart of the entire electronics industry, and in terms of millimeter-wave terahertz, the operating frequency of terahertz integrated circuits is thousands of times that of existing common integrated circuit chips. Design, processing, and testing are extremely challenging. As the core of terahertz integrated circuits, terahertz devices have become the key to the future development of information technology and semiconductor industry. [0003] Regarding terahertz ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/737G06F30/39
CPCH01L29/7378
Inventor 周春宇王冠宇闫伟涛常晓伟耿欣蒋巍
Owner YANSHAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap