A large-signal equivalent circuit model of a composite strained si/sige heterojunction bipolar transistor

Abstract

The invention discloses a compound strain Si / SiGe heterojunction bipolar transistor large-signal equivalent circuit model, which belongs to the technical field of semiconductor integrated circuits, and includes an intrinsic NPN transistor unit, a parasitic substrate PNP transistor unit, and a substrate matching network unit , BC parasitic equivalent circuit unit, BE parasitic equivalent circuit unit, and emitter, base and collector parasitic equivalent resistance. The invention can accurately reflect the physical nature of heterojunction bipolar transistor devices, accurately simulate device characteristics, and has few parameters and simple extraction process. At the same time, the established equivalent circuit model can be embedded in simulation software, and is suitable for simulating high-frequency integrated circuits Simulation design.

Description

technical field [0001] The invention relates to a compound strain Si / SiGe heterojunction bipolar transistor large-signal equivalent circuit model, which belongs to the technical field of semiconductor integrated circuits. Background technique [0002] Terahertz integrated circuits are the core of various solid-state terahertz system applications, and are a typical cross-research frontier field, which specifically involves two aspects of terahertz and integrated circuits. Among them, integrated circuit chips are the heart of the entire electronics industry, and in terms of millimeter-wave terahertz, the operating frequency of terahertz integrated circuits is thousands of times that of existing common integrated circuit chips. Design, processing, and testing are extremely challenging. As the core of terahertz integrated circuits, terahertz devices have become the key to the future development of information technology and semiconductor industry. [0003] Regarding terahertz ...

AI Technical Summary

Problems solved by technology

The design and implementation of silicon-based terahertz integrated circuits is carried out close to the cut-off frequency of transistors. Generally, the cut-off frequency of transistors is 300GHz-1THz. However, the results of existing models are still concentrated around dozens of GHz, which cannot accurately support the simulation of integrated circuits in the terahertz frequency band. design

Images