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Sense amplifier is used for compensating SONOS memory

A sensitive amplifier and memory technology, which is applied in the field of sensitive amplifiers, can solve problems such as easy-to-read data and unreasonable allocation of unit windows.

Active Publication Date: 2020-07-07
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] This application provides a sensitive amplifier for compensating SONOS memory, which can solve the problem in the related art that the data is easily misread due to unreasonable cell window allocation

Method used

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  • Sense amplifier is used for compensating SONOS memory
  • Sense amplifier is used for compensating SONOS memory
  • Sense amplifier is used for compensating SONOS memory

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Embodiment Construction

[0037] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0038] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

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Abstract

The invention relates to the technical field of semiconductor integrated circuits, in particular to a sense amplifier for compensating an SONOS memory. The sense amplifier comprises a reference storage unit used for providing a reference current, wherein the reference storage unit comprises a first SONOS device and a second SONOS device which are connected in parallel, and a node where a drain electrode of the first SONOS device is connected with a drain electrode of the second SONOS device serves as a reference node of the reference storage unit; a first current clamping circuit is used for clamping the current flowing through the first current clamping circuit to be equal to the current of the reference storage unit; a first pre-charging circuit is used for charging the first data node;a second current clamping circuit is used for clamping the current flowing through the second current clamping circuit to be equal to the current of a data storage unit; a second pre-charging circuitis used for charging the second data node; a current mirroring circuit is used for outputting the reference current input into the first data node to the second data node in a mirroring manner; and acomparison circuit is used for outputting data according to a comparison result of the reference current and the data storage unit current.

Description

technical field [0001] The present application relates to the technical field of semiconductor integrated circuits, in particular to a sense amplifier for compensating SONOS memory. Background technique [0002] The working process of the sensitive amplifier to read the selected storage circuit includes a pre-charging process and an amplification process. [0003] In the pre-charging process (Pre-charge): by applying a pre-charging signal to the pre-charging module, the pre-charging module charges the data node, so that the voltage of the data node rises to the pre-charging voltage. [0004] Amplification process after precharging: compare the memory circuit current with the reference current, charge or discharge the data node according to the comparison result, compare the voltage of the data node with the reference voltage, and form an output signal Dout according to the comparison result. [0005] The current of the memory circuit will vary according to the information s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/06G11C7/08
CPCG11C7/06G11C7/08Y02D30/70
Inventor 刘芳芳邵博闻
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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