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In-plane asymmetric magnetic memory unit and preparation method

A magnetic storage unit, asymmetric technology, applied in the field of information technology and microelectronics, can solve the problems of increasing cost, high price, and increasing complexity and difficulty of semiconductor process, so as to prolong working life, reduce energy consumption, reduce cost and process effect of difficulty

Active Publication Date: 2022-02-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0002] The magnetization reversal driven by the spin-orbit torque (SOT) type current can realize the magnetization reversal of the vertical magnetization layer by the in-plane current, and has the advantages of fast switching speed, low power consumption, and high stability (the driving current does not need to pass through the oxidation of the magnetic tunnel junction. However, the current scheme requires the introduction of additional heavy metal layers or other strong spin-orbit coupling layers in the magnetic tunnel junction stack (adjacent to the free vertical magnetic layer of the magnetic tunnel junction), which are often Expensive metals such as Pt not only increase the cost, but also increase the complexity (pollution of the vacuum chamber, etc.) and difficulty to the existing semiconductor process

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Embodiment Construction

[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. For clarity, components in the drawings may not be drawn to scale. Also, some components may be omitted from the drawings. It is contemplated that elements and features of one embodiment may be beneficially incorporated in another embodiment without further recitation.

[0035] The present invention provides an in-plane asymmetric magnetic memory unit, such as figure 1 As shown, the magnetic memory unit includes: a substrate; and a perpendicular magnetization layer located on the substrate; by heating the perpendicular magnetization layer, the asymmetry of the film plane direction is generated in the perpendicular magnetization layer (ie The asymmetry of the film surface direction of the perpendicular magnetization film l...

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Abstract

The invention discloses an in-plane asymmetric magnetic storage unit and a preparation method; wherein, the in-plane asymmetric magnetic storage unit comprises: a substrate; a perpendicular magnetization layer located on the substrate, and heated to make Asymmetry in the direction of the film plane is generated in the perpendicular magnetization layer, so that directional magnetization switching occurs. In the multi-layer film stack without heavy metal layer or other strong spin-orbit coupling layer in contact with the vertical magnetization layer, the invention realizes the SOT type directional magnetization switching operation of the vertical magnetization layer by the in-plane current, reducing the cost and process difficulty.

Description

technical field [0001] The invention relates to the fields of information technology and microelectronics, in particular to an in-plane asymmetric magnetic storage unit and a preparation method. Background technique [0002] The magnetization reversal driven by the spin-orbit torque (SOT) type current can realize the magnetization reversal of the vertical magnetization layer by the in-plane current, and has the advantages of fast switching speed, low power consumption, and high stability (the driving current does not need to pass through the oxidation of the magnetic tunnel junction. However, the current scheme requires the introduction of additional heavy metal layers or other strong spin-orbit coupling layers in the magnetic tunnel junction stack (adjacent to the free vertical magnetic layer of the magnetic tunnel junction), which are often Expensive metals such as Pt not only increase the cost, but also increase the complexity (pollution of the vacuum chamber, etc.) and d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/02H01L43/08H01L43/12H10N50/80H10N50/01H10N50/10
CPCH10N50/80H10N50/01H10N50/10
Inventor 王开友曹易
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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