A patterned wafer drying method

Abstract

The invention discloses a patterned wafer drying method. The wafer drying method includes setting a top module for converging hot nitrogen flow to the bottom of the wafer at the bottom of the wafer holding chamber and between the washing tanks. An exhaust slit communicating with the inside and outside of the wafer holding chamber is provided, and a gas jet module is set at the first inlet so that the hot nitrogen can provide sufficient kinetic energy, and there is a gap between the top module and the wafer. In the first interval, the gas jet module includes several nozzles with adjustable jet flow rate, and the hot nitrogen gas is discharged from the wafer accommodation chamber through the exhaust slot and the gap between the wafer accommodation chamber and the top film module. The present invention can fully dry the edge part of the bottom of the wafer by setting a top module for converging the hot nitrogen flow to the bottom of the wafer at the bottom of the wafer holding chamber, so that the hot nitrogen can flow in the gas jet flow module, A circulating airflow field is formed between the wafer holding chamber and the top sheet module to improve the drying efficiency.

Description

technical field [0001] The invention relates to the technical field of wafer drying, in particular to a patterned wafer drying method. Background technique [0002] In the field of semiconductor manufacturing, wafer products can be divided into wafers with no surface processing, flat wafers after surface treatment, and partially patterned wafer products, while the third type of wafer products above is patterned. Shaped wafers, the capillary phenomenon formed by the surface tension of the water molecules of the wafer product will cause the water to be adsorbed in the patterned holes or pillar holes and cannot be fully dried, resulting in a long drying time and low efficiency. And generally the wafer is overhead in the wafer holding room, and the moisture will adhere to the edge of the bottom of the wafer with the gravity. In the general wafer drying method, the drying time can only be achieved by increasing the drying time at the bottom of the wafer. The problem of moisture ...

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Problems solved by technology

[0002] In the field of semiconductor manufacturing, wafer products can be divided into wafers with no surface processing, flat wafers after surface treatment, and partially patterned wafer products, while the third type of wafer products above is patterned. Shaped wafers, the capillary phenomenon formed by the surface tension of the water molecules of the wafer product will cause the water to be adsorbed in the patterned holes or pillar holes and cannot be fully dried, resulting in a longer drying time and lower efficiency

And generally the wafer is overhead in the wafer holding room, and the moisture will adhere to the edge of the bottom of the wafer with the gravity. In the general wafer drying method, the drying time can only be achieved by increasing the drying time at the bottom of the wafer. The problem of moisture drying at the edge of the wafer and moisture drying in the patterned hole or post hole, the efficiency is too low, and the problem of incomplete drying of the wafer cannot be solved

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