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Thin film circuit with large-area side wall metal pattern and preparation method thereof

A technology of metal graphics and thin film circuits, applied in circuits, electrical components, electric solid devices, etc., can solve problems such as complex operations and easy problems, and achieve the effect of ensuring positional accuracy

Active Publication Date: 2020-06-05
NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This process requires the use of specific fixtures to ensure alignment accuracy, and the operation is complex and prone to problems

Method used

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  • Thin film circuit with large-area side wall metal pattern and preparation method thereof
  • Thin film circuit with large-area side wall metal pattern and preparation method thereof
  • Thin film circuit with large-area side wall metal pattern and preparation method thereof

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Embodiment Construction

[0041] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0042] A method for preparing a thin film circuit with a large-area sidewall metal pattern, comprising the following steps:

[0043] (1) Use a laser to make a shape mark at the position of the cavity on the surface of the substrate. At this time, the depth of laser processing does not penetrate the thickness of the substrate, and the shape mark can be seen clearly;

[0044] Such as figure 1 As shown, a substrate 101 with a thickness of 0.1 mm to 1 mm (the type can be alumina ceramics, aluminum nitride ceramics, quartz, silicon, etc.) is put into the laser processing equipment, and the cavity shape mark 102 is processed by laser. The depth of the shape mark is not more than 50µm, which is much smaller than the thickness of the substrate. The shape mark 102 at the position of the laser processing cavity can be a regular quadrilateral or an irre...

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Abstract

The invention discloses a thin film circuit with a large-area side wall metal pattern and a preparation method thereof, and belongs to the technical field of thin film circuits. The method comprises the steps of manufacturing a cavity shape mark, manufacturing a front metallized pattern, carrying out two-layer protection on the front surface of a substrate, opening a cavity, carrying out metal sputtering and electroplating thickening from the back surface to the top, removing photoresist, cutting and the like. According to the prepared thin film circuit, the side wall metal layer and the backmetal layer of the thin film circuit are formed at the same time, so that the connecting part of the two metal layers is of a complete, continuous and smooth transition structure. The method is simple, convenient and easy to implement, the prepared thin film circuit is more excellent in structure and effect, can be used as a key technology for achieving a miniaturized, high-reliability and high-frequency microwave / millimeter wave circuit, and has important significance in related technical fields.

Description

technical field [0001] The invention belongs to the technical field of thin film circuits, in particular to a thin film circuit with large-area sidewall metal patterns and a preparation method thereof. Background technique [0002] Thin-film circuits are one of the important transmission structures in microwave / millimeter-wave modules. With the further improvement of module miniaturization and high reliability requirements, there are more and more application scenarios for thin-film circuits with large-area sidewall metal patterns. Through the connection and conduction of the metal on the side wall, good electrical characteristics and welding reliability can be guaranteed, and at the same time, it can facilitate the miniaturization of the module. [0003] In the manufacturing process of thin film circuits with sidewall metal patterns, the preparation of sidewall metal patterns is very important. Not only is its preparation process compatible with the entire thin film circui...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48H01L23/485H01L23/498
CPCH01L21/4846H01L23/485H01L23/49805
Inventor 赵飞王志成贾世旺徐亚新刘晓兰梁广华严英占卢会湘唐小平王康杨宗亮王杰段龙帆
Owner NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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