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Ga2O3 nano-pillar photocatalytic material based on flexible substrate, and preparation method thereof

A technology of photocatalytic materials and flexible substrates, applied in the direction of metal/metal oxide/metal hydroxide catalysts, chemical instruments and methods, physical/chemical process catalysts, etc., can solve problems such as insufficient and difficult to absorb light, Achieve the effect of uniform shape, sufficient light absorption and high specific surface area

Pending Publication Date: 2020-06-02
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the deficiencies in the prior art, the present invention proposes a flexible substrate-based Ga 2 o 3 The nano-column photocatalytic material and its preparation method can effectively solve the problems of difficult recovery of catalysts such as immobilization and separation and insufficient absorption of light

Method used

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  • Ga2O3 nano-pillar photocatalytic material based on flexible substrate, and preparation method thereof
  • Ga2O3 nano-pillar photocatalytic material based on flexible substrate, and preparation method thereof
  • Ga2O3 nano-pillar photocatalytic material based on flexible substrate, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Ga on flexible substrate 2 o 3 The preparation method of nano column photocatalytic material, comprises the following steps:

[0054] (1) The flexible glass fiber substrate was ultrasonically cleaned with acetone, absolute ethanol, and deionized water for 10 min, and then cleaned with dry N 2 Air-dried, and dried in an oven at 60°C for 12 hours for later use;

[0055] (2) Deposit SnO on the substrate cleaned in step (1) under vacuum by radio frequency magnetron sputtering 2 The film serves as a seed layer for growth and is annealed in a muffle furnace. The specific parameters of the RF magnetron sputtering technology used are as follows: the cavity vacuum is 5×10 -4 Pa, the working atmosphere is Ar and O 2 , the ratio is 1:1, the working pressure is 0.8Pa, the substrate temperature is 550°C, the sputtering power is 100W, and the sputtering time is 4h; the parameters of the muffle furnace annealing treatment used are as follows: the annealing temperature is 550°C ,...

Embodiment 2

[0064] Steps (1) and (2) are the same as those in Embodiment 1, and will not be repeated here.

[0065] (3) The sample obtained after step (2) will be placed in 0.6g / 30mL Ga(NO 3 ) 3 In the growth aqueous solution, the GaOOH nanopillar array was obtained by growing in a stainless steel autoclave at 150°C for 8h, and then placed in a muffle furnace for calcination at 400°C for 4h to obtain the α-Ga2O3 nanopillar array.

[0066] Further can also include step (4), the α-Ga based on flexible substrate 2 o 3 Nanopillar arrays were annealed at 700°C for 20min-120min to prepare different phases of Ga 2 o 3 array of nanopillars. Gained Ga 2 o 3 The chemical composition and morphology of the nanopillar array are similar to Example 1.

Embodiment 3

[0068] Steps (1), (2), and (4) are the same as those in Embodiment 1, and will not be repeated here.

[0069] (3) The sample obtained after step (2) will be placed in 0.3g / 30mL Ga(NO 3 ) 3 In the growth solution, grow in a stainless steel autoclave at 150 °C for 10 h to obtain GaOOH nanopillar arrays, and then place them in a muffle furnace for calcination at 400 °C for 4 h to obtain α-Ga 2 o 3 array of nanopillars. Gained Ga 2 o 3 The chemical composition and morphology of the nanopillar array are similar to Example 1.

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Abstract

The invention relates to a Ga2O3 nano-pillar photocatalytic material based on a flexible substrate, and a preparation method thereof. The Ga2O3 nano-pillar array comprises a flexible substrate layer,a SnO2 seed crystal layer located on the flexible substrate layer and a Ga2O3 nano-pillar array located on the SnO2 seed crystal layer, the Ga2O3 nano-pillar array is formed by arranging a plurality of Ga2O3 nano-pillars at intervals in an array mode, and the cross section of each Ga2O3 nano-pillar is quadrilateral. The Ga2O3 nanopillars are synthesized on the flexible substrate in situ, so that the photocatalytic material is firm in combination, good in stability, good in photocatalytic performance, large in specific surface area, easy to recycle and separate and suitable for industrial production.

Description

technical field [0001] The invention relates to the field of gallium oxide nanocolumn photocatalysis, in particular to a Ga 2 o 3 Nanopillar array and its preparation method Background technique [0002] With the continuous development of human science and technology, energy crisis and environmental pollution have gradually become important factors restricting the economic development of countries around the world. The photocatalytic process can use light energy to decompose waste gas and industrial wastewater into small inorganic molecules such as water and carbon dioxide, or obtain clean energy through photolysis of water to produce hydrogen, so it has broad application prospects in the fields of environment and energy. [0003] Various photocatalysts have been developed, among which Ga 2 o 3 As a new type of wide-bandgap semiconductor with a bandgap width of 4.8eV, it has good chemical and thermal stability, and its wide bandgap greatly improves the migration rate of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/14B01J23/08C03C25/52
CPCB01J23/14B01J23/08C03C25/52B01J35/39
Inventor 王顺利孙翰林郭道友
Owner ZHEJIANG SCI-TECH UNIV
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