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Preparation and modulation method of a photoelectric synapse device

A technology of synaptic devices and modulation methods, which is applied in the field of artificial neural networks, can solve problems such as the limited range of optical bands and difficulty in meeting complex application scenarios, and achieve the effect of broadening the response range of light waves

Active Publication Date: 2021-11-30
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current photoelectric synapse device simply integrates the photoelectric response function into the synapse device, and the range of light wavelengths it responds to is extremely limited, making it difficult to meet the requirements of complex application scenarios.

Method used

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  • Preparation and modulation method of a photoelectric synapse device
  • Preparation and modulation method of a photoelectric synapse device
  • Preparation and modulation method of a photoelectric synapse device

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Embodiment Construction

[0041] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. For the step numbers in the following embodiments, it is only set for the convenience of illustration and description, and the order between the steps is not limited in any way. The execution order of each step in the embodiments can be adapted according to the understanding of those skilled in the art sexual adjustment.

[0042] refer to figure 1 , the embodiment of the present invention provides a method for preparing a photoelectric synapse device, which includes the following steps:

[0043] S310, preparing a field effect transistor structure including a gate layer, a dielectric layer, a source electrode and a drain electrode;

[0044] S320, transferring the graphene film over the source electrode and the drain electrode;

[0045] S330, processing the graphene film into a conductive channel;

[0046] S340, preparing a graphene f...

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Abstract

The invention discloses a preparation and modulation method of a photoelectric synapse device. The preparation method includes the following steps: preparing a field effect transistor structure including a gate layer, a dielectric layer, a source electrode and a drain electrode; Transferring the graphene film on the top; processing the graphene film into a conductive channel; preparing a graphene film on the surface of the graphene film processed into a conductive channel to obtain a photoelectric synapse device with a field effect transistor structure. The present invention prepares a graphene film on the surface of the graphene film by transferring the graphene film above the source electrode and the drain electrode to obtain a photoelectric synapse device with a field effect transistor structure. The light wave response range, and the field effect transistor structure is used to realize the regulation of optical signals and electrical signals, so as to meet the requirements of complex application scenarios. The invention can be widely applied in the technical field of artificial neural network.

Description

technical field [0001] The invention relates to the technical field of artificial neural networks, in particular to a method for preparing and modulating a photoelectric synapse device. Background technique [0002] Neuromorphic computing is one of the fastest-growing technologies in the past decade. It achieves efficient parallel processing of large amounts of data by simulating the edge computing of the human nervous system, and overcomes the problems caused by the separation of memory and processor in traditional von Neumann computers. Disadvantages such as computing delays and high energy consumption are of great significance for promoting the development of artificial intelligence, machine learning, autonomous driving and other fields. For artificial neural networks, a large amount of data needs to be obtained from the external environment with the help of various sensors, the most important of which is the visual sensor, and more than 80% of the information is obtained...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/028H01L31/113G06N3/067
CPCG06N3/0675H01L31/028H01L31/1136H01L31/1804Y02P70/50
Inventor 鲁统部王静静陈旭东张志成
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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