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Wavy pattern of integrated circuit and forming method thereof and integrated circuit

An integrated circuit and wave-shaped technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of broken lines in wave-shaped patterns, small k1 values, and reduced yields of integrated circuit manufacturing, so as to reduce broken lines , Improve the effect of manufacturing yield

Active Publication Date: 2020-05-22
CHANGXIN MEMORY TECH INC
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Problems solved by technology

[0004] In related technologies, one-time patterning process is usually used to process wavy patterns, but in order to ensure good resolution, the value of k1 is usually small, so when using one-time patterning process to process wavy patterns, it is easy to appear at the bend of the wavy pattern. The case of disconnection reduces the manufacturing yield of integrated circuits

Method used

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  • Wavy pattern of integrated circuit and forming method thereof and integrated circuit
  • Wavy pattern of integrated circuit and forming method thereof and integrated circuit
  • Wavy pattern of integrated circuit and forming method thereof and integrated circuit

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Embodiment Construction

[0046] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this application will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0047] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience, for example, according to the description in the accompanying drawings directions for the example described above. It will be appreciated that if the illustrated device is turned over s...

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Abstract

The invention relates to the technical field of semiconductor manufacturing. Specifically, the invention relates to a forming method of a wavy pattern of an integrated circuit, the wavy pattern of theintegrated circuit and the integrated circuit. The forming method of the wavy pattern comprises the steps that a first pattern and a second pattern are formed on a substrate, the first pattern comprises a plurality of first strip-shaped patterns which are arranged at intervals in the first direction, and the second pattern comprises a plurality of second strip-shaped patterns which are arranged at intervals in the second direction and intersect with the first strip-shaped patterns; a third pattern is formed on the substrate, the third pattern is located on the first pattern and the second pattern, and the third pattern comprises a plurality of third strip-shaped patterns which are arranged at intervals in the third direction and intersect with the first strip-shaped pattern and the secondstrip-shaped pattern; and the first strip-shaped patterns and the second strip-shaped patterns are cut off through the third strip-shaped patterns, so that wavy patterns are formed between the adjacent third strip-shaped patterns. Through the design, the situation that the wavy pattern is broken can be reduced, and the manufacturing yield of an integrated circuit is improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, in particular, to a method for forming a wave-shaped pattern of an integrated circuit, a wave-shaped pattern of an integrated circuit, and the integrated circuit. Background technique [0002] With the development of integrated circuit manufacturing, the integration level is getting higher and higher, and the number of transistors contained in a unit area is also increasing rapidly. The main index to measure the degree of integration in the manufacturing process is the resolution of the photolithography process, which is used to distinguish the ability of the feature pattern close to the surface of the silicon wafer. [0003] Currently, the resolution R is generally measured by a critical dimension (CD, Critical Dimension). Wherein, the smaller the critical dimension formed, the better the resolution. In order to obtain a smaller critical dimension, it can be impro...

Claims

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Application Information

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IPC IPC(8): H01L21/027H01L21/3213
CPCH01L21/0271H01L21/32139
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC
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