Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memory manufacturing method and memory

A manufacturing method and memory technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as difficult to guarantee memory quality and poor memory unit effect, and achieve improved passivation effect and increased diffusion chance, quality-enhancing effects

Active Publication Date: 2020-05-15
YANGTZE MEMORY TECH CO LTD
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In related technologies, the effect of passivating memory cells is poor, and it is difficult to ensure memory quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory manufacturing method and memory
  • Memory manufacturing method and memory
  • Memory manufacturing method and memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0054] The technical solutions of the present invention will be further described in detail below in conjunction with the drawings and embodiments. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0055] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. The advantages and features of the present disclosure will be more apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use inaccurate scales, which are only used to facilitate and clearly assist the purpose of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention discloses a memory manufacturing method and a memory. The memory manufacturing method comprises the following steps of forming a passivation layer on a first substratewith a memory unit, wherein a storage unit is located on the first surface of the first substrate, the passivation layer is located on the second surface of the first substrate, and the second surfaceof the first substrate is the surface opposite to the first surface of the first substrate; forming a first barrier layer with a first dangling bond on the second surface of the first substrate and on the passivation layer; performing heat treatment on the passivation layer at a preset temperature, wherein the hydrogen particles in the passivation layer are released to the first barrier layer andare combined with the first dangling bond to form a first covalent bond.

Description

technical field [0001] Embodiments of the present disclosure relate to the field of integrated circuits, and in particular, to a method for manufacturing a memory and the memory. Background technique [0002] As the feature size of the semiconductor manufacturing process is getting smaller and smaller, the storage density of the memory is getting higher and higher. The memory prepared by arranging a plurality of memory units along the direction perpendicular to the stack structure can increase the integration degree on the wafer, realize the increase of storage density, and reduce the cost. [0003] During the preparation process of the memory, due to the presence of lattice defects in the memory cells, etc., the memory cells need to be passivated to remove the defects in the memory cells and ensure the quality of the memory. In the related art, the effect of passivating the storage unit is poor, and it is difficult to guarantee the quality of the storage. Contents of the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L27/115H10B69/00
CPCH01L21/02318H01L21/02321H01L21/02109H01L21/02225
Inventor 马浩东刘峻董金文邹欣伟
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com