Negative photoresist composition containing carboxyl phenolic resin with high heat resistance

A negative photoresist and phenolic resin technology, applied in the field of functional polymer materials, can solve the problems of insufficient heat resistance, easy oxidation of phenolic hydroxyl groups and methylene groups, etc., to increase entanglement, reduce alkali solubility, and save energy. cost effect

Pending Publication Date: 2020-05-08
SUZHOU RUIHONG ELECTRONIC CHEM CO LTD
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional film-forming resin-novolac resin has insufficient heat resistance due to the easy oxidation of phenolic hydroxyl and methylene, so the protection of hydroxyl and methylene has become an important way to improve the heat resistance of phenolic resin

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Negative photoresist composition containing carboxyl phenolic resin with high heat resistance
  • Negative photoresist composition containing carboxyl phenolic resin with high heat resistance
  • Negative photoresist composition containing carboxyl phenolic resin with high heat resistance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042]

Embodiment 2

[0044]

Embodiment 3

[0046]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
glass transition temperatureaaaaaaaaaa
Login to view more

Abstract

The invention discloses a negative photoresist composition containing carboxyl phenolic resin with high heat resistance. According to the high-heat-resistance carboxyl phenolic resin, the structural general formula is shown in the description, wherein x is 0-4, the ratio of m to n is 0.05-0.75: 1, R is H, phenyl or C1-C9 alkyl, and the weight-average molecular weight of the resin is 8,000-35,000g/mol. The film-forming resin is mixed with a photoacid generator, a curing agent, an additive, a solvent and other components to obtain the negative photoresist composition. Tests prove that the negative photoresist composition is high in resolution ratio, good in heat resistance and suitable for a lift-off metal stripping process under a high-temperature operation condition.

Description

technical field [0001] The invention relates to the technical field of functional polymer materials, in particular to a negative photoresist composition prepared by using high heat-resistant carboxyl phenolic resin as a film-forming resin. Background technique [0002] Photoresists are widely used in microelectronics manufacturing fields such as discrete devices, LEDs, integrated circuits, and TFT-LCDs. They affect major fields such as information engineering, energy and environmental protection, and national defense, and play a very important role in the development of high-tech industries and the national economy. effect. According to the development mechanism, it is divided into positive photoresist and negative photoresist. After exposure, the part of the photoresist that is cross-linked by the light and cannot be washed off during development belongs to the negative photoresist, and vice versa, it is the positive photoresist. [0003] The lift-off metal lift-off proces...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/038G03F7/004
CPCG03F7/038G03F7/004
Inventor 纪昌炜郑祥飞徐亮
Owner SUZHOU RUIHONG ELECTRONIC CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products