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Boron-doped microporous silicon dioxide film as well as preparation method and application thereof

A silicon dioxide membrane and silicon dioxide technology, applied in the field of membrane separation, can solve the problems of low salt rejection rate, low permeation flux, poor stability, etc., and achieve the effect of improving desalination performance, simple preparation process, and easy operation

Active Publication Date: 2020-05-05
JIANGXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the deficiencies in the current application of pervaporation membrane method for desalination of seawater and desalination of high-salt wastewater, the purpose of the present invention is to provide a non-metallic boron-doped microporous silica membrane and its preparation method to improve conditions such as low temperature or room temperature. Problems such as low permeation flux, low salt rejection rate and poor stability of the lower membrane

Method used

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  • Boron-doped microporous silicon dioxide film as well as preparation method and application thereof
  • Boron-doped microporous silicon dioxide film as well as preparation method and application thereof
  • Boron-doped microporous silicon dioxide film as well as preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0025] (1) Mix 7.71 mL of 1,2-bis(triethoxysilyl)ethane (BTESE) and 1.75 mL of triethyl borate (TEB) into 156 mL of absolute ethanol, and stir vigorously at room temperature for 4 hours , and then add dropwise a mixed solution of 0.45mL 65-68% concentrated nitric acid and 16.2mL deionized water under stirring conditions, and continue stirring at room temperature for 15 hours to obtain a non-metallic boron-doped silica sol. The sol formulation ratio is Si:B:H + :H2 O=1:0.25:0.165:22.5 (molar ratio).

[0026] (2) The boron-doped silica sol prepared in step (1) was diluted 3 times with absolute ethanol, and then the tubular Al with an average pore diameter of 100 nm 2 o 3 Dip the porous carrier into the diluted sol for 30 seconds, dry it in a constant temperature and humidity box for 12 hours, and finally heat it up to 300°C in an air atmosphere in a muffle furnace and bake it for 3 hours, with a temperature rise / fall rate of 0.5°C min -1 .

[0027] (3) After repeating the ab...

Embodiment 2-4

[0032] Change the boron-doped content (B / Si ratio, molar ratio) in silica sol, other preparation conditions are all identical with embodiment 1, can obtain the silica film of a series of different boron doping ratios (i.e. embodiment 2-4). The pervaporation desalination performance of these membranes was tested at a temperature of 60°C with an initial concentration of 3.5wt% NaCl solution as the feed solution, and the results are shown in Table 2.

[0033] Table 2. Pervaporation desalination performance of silica membranes in Examples 2-4 and Comparative Examples

[0034]

Embodiment 5-7

[0038] Changing the content of acid in the silica sol (H + / Si ratio, molar ratio), other preparation conditions are all the same as in Example 1, and a series of boron-doped silicon dioxide films (ie, Examples 5-7) under the action of catalysts with different acid amounts can be obtained. The pervaporation desalination performance of these membranes was tested at a temperature of 60°C with an initial concentration of 3.5wt% NaCl solution as the feed solution, and the results are shown in Table 3.

[0039] Table 3. Pervaporation desalination performance of boron-doped silica membranes in Examples 5-7

[0040]

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Abstract

The invention relates to a boron-doped microporous silicon dioxide film for seawater desalination or high-salinity wastewater desalination treatment and a preparation method thereof. Aiming at the defects of the existing membrane desalination technology, organosilane is used as a precursor, a sol-gel technology is adopted to dope a nonmetal boron element under the action of an acid catalyst in synthetic sol, and the high-performance boron-doped microporous silicon dioxide film with thermal stability is prepared on a porous carrier by a dip-coating method. The method is simple in preparation process and easy to operate, and has good repeatability. The boron-doped silicon dioxide film has excellent pervaporation desalination performance, has high water flux and desalination rate at room temperature, shows excellent long-time hydrothermal stability, is particularly suitable for high-concentration seawater or high-salinity wastewater which is difficult to treat by a reverse osmosis membrane technology, can meet the requirement of large-scale industrial application, and also provides a new strategy for efficient and safe desalination application of a membrane method.

Description

technical field [0001] The invention relates to a boron-doped microporous silicon dioxide membrane and its preparation method and application. The silicon dioxide membrane can be applied to seawater desalination and desalination treatment of high-salt wastewater, and belongs to the technical field of membrane separation. Background technique [0002] With the rapid growth of the world population and the continuous deterioration of the global ecological environment, the resulting shortage of fresh water resources has become one of the main factors restricting the development of human society. As far as the current distribution of water resources in the world is concerned, the most abundant reserves are sea water, accounting for about 97.5% of the global total, while fresh water resources account for less than 2.5%. Due to the difficulty of development, the polar glaciers and deep groundwater are difficult to use directly, but the fresh water resources that are relatively easy...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01D71/02B01D69/08B01D69/06B01D69/04B01D67/00B01D65/10C02F1/44C02F103/08
CPCB01D65/10B01D67/0039B01D69/04B01D69/06B01D69/08B01D71/027C02F1/44C02F2103/08Y02A20/131
Inventor 张小亮张锐
Owner JIANGXI NORMAL UNIV
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