Lateral SCR device with high maintaining voltage

Abstract

The invention provides a lateral SCR device with a high maintaining voltage. The device comprises a P-type substrate, an n-type well region, a p-type well region, an anode first N+ contact region, ananode first P+ contact region,, an N+ low trigger region, a cathode second P+ isolation region, a cathode second N+ contact region tangent to the cathode second P+ isolation region, a cathode first P+isolation region tangent to the cathode second N+ contact region, a cathode first N+ contact region tangent to a cathode first P+ isolation region, a second P+ contact region tangent to a cathode first N+ contact region, and a first cathode compensation resistor of which one end is connected with the cathode second N+ contact region, wherein surfaces of the anode first N+ contact region and the anode first P+ contact region are short-circuited by metal to form a device anode, and surfaces of the cathode first N+ contact region and the cathode second P+ contact region are short-circuited through metal and are connected with the other end of the first cathode compensation resistor to form a device cathode. The device is advantaged in that the maintaining voltage of the SCR device is improved, the latch-up resistance of the device is improved, current distribution of a device cathode region is improved, and robustness of the device is improved.

Description

technical field [0001] The invention belongs to the field of electronic science and technology, and is mainly used for electrostatic discharge (Electrostatic Discharge, ESD for short) protection technology. Furthermore, it is a high sustaining voltage SCR device. Background technique [0002] With the development of semiconductor technology and the improvement of integrated circuit technology, the integration level of integrated circuits is getting higher and higher, but at the same time, the impact of electrostatic discharge (ESD, Electrostatic Discharge) on circuits is also increasing. Today, ESD protection has become one of the most important issues for chip designers to consider. [0003] The SCR (silicon controlled rectifier) ​​device has excellent current discharge capability. When used as an ESD protection device, it can greatly reduce the area of ​​the integrated circuit occupied by the ESD module, reduce the cost, and improve the robustness. However, the tradition...

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Problems solved by technology

If there is an intersection point between the load line of the power supply and the IV characteristic curve of the device, after the ESD pulse turns on the SCR, the SCR device can maintain the open state under the bias of the circuit power supply, causing the device to latch-up. As a result, the circuit cannot work normally, and even faces the risk of burning

In addition, when the lateral SCR device is turned on, due to the existence of the well resistance, the bias voltage of the emitter junction of the cathode and anode parasitic triode is not consistent, which will lead to the concentration of current on one side, and the wider the junction, the more this phenomenon will be. serious

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