Light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of light-emitting diodes. An InGaN / GaN multi-quantum well layer in the light-emitting diode epitaxial wafer is arranged to comprise a plurality of first composite units and a plurality of second composite units which are alternately stacked, wherein the first composite unit comprises a first InGaN well layer and a first GaN barrier layer which are stacked; the second composite unit comprises a second InGaN well layer and a second GaN barrier layer which are stacked; the thickness of the first InGaN well layer is less than that of the second InGaN well layer; the second InGaN well layer ensures the luminous efficiency of the InGaN / GaN multi-quantum well layer;and the first InGaN well layer with the thickness being less than that of the second InGaN well layer can reduce the In content in the second InGaN well layer while the luminous efficiency is ensured,and the polarization effect caused by the first InGaN well layer is reduced. The second GaN barrier layer with the thickness being greater than that of the first GaN barrier layer is arranged to playa role in blocking electrons, the number of electrons and holes compounded in the InGaN / GaN multi-quantum well layer is ensured, and the light-emitting effect of the InGaN / GaN multi-quantum well layer is integrally improved.

Description

technical field [0001] The disclosure relates to the technical field of light-emitting diodes, in particular to epitaxial wafers of light-emitting diodes and a preparation method thereof. Background technique [0002] Light-emitting diodes are semiconductor electronic components that can emit light. Light-emitting diodes are widely used in lighting equipment such as traffic lights, car interior and exterior lights, urban landscape lighting, and indoor and outdoor display screens. When preparing a light-emitting diode, it is necessary to prepare a light-emitting diode epitaxial wafer first, and then perform subsequent fabrication through the light-emitting diode epitaxial wafer to obtain a light-emitting diode. [0003] The structure of the epitaxial layer of the light-emitting diode mainly includes: the substrate and the buffer layer grown on the substrate in turn, the non-doped GaN layer, the N-type GaN layer, the InGaN / GaN multi-quantum well layer and the P-type GaN layer....

AI Technical Summary

Problems solved by technology

Due to the existence of piezoelectric polarization and spontaneous polarization in the InGaN / GaN multi-quantum well layer, piezoelectric polarization and spontaneous polarization will cause the quantum confinement Stark effect, that is, piezoelectric polarization and spontaneous polarization lead to electron-hole For the phenomena of spatial separation and reduction of wave function overlap, the luminous efficiency of InGaN / GaN multi-quantum well layer decreases, and the luminous peak (absorption edge) red shifts

The luminous efficiency of the resulting InGaN / GaN multi-quantum well layer is still not ideal

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