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Process method for preparing multilayer SiNx back film by solar single crystal PERC

A process method, solar technology, applied in sustainable manufacturing/processing, final product manufacturing, photovoltaic power generation, etc., can solve the problems of solar cell lowering refractive index, poor film uniformity effect, etc., to achieve lower refractive index, convenient coating , the effect of improving energy absorption

Active Publication Date: 2020-04-17
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the process is a coating system on the back of a single-layer anti-reflection film, and the uniformity of the film surface after coating is poor, and the obtained solar cell structure cannot effectively reduce the refractive index.

Method used

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  • Process method for preparing multilayer SiNx back film by solar single crystal PERC
  • Process method for preparing multilayer SiNx back film by solar single crystal PERC
  • Process method for preparing multilayer SiNx back film by solar single crystal PERC

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] Multi-layer SiN for solar monocrystalline PERC x The back film process includes the following steps:

[0061] a) Nitrogen filling: Nitrogen is filled to keep the furnace tube at atmospheric pressure;

[0062] b) Entering the boat: sending the full furnace of silicon wafers into the PECVD furnace tube;

[0063] c) Evacuation: pump out all the gas in the furnace tube, so that the tube is in a vacuum state;

[0064] d) Constant pressure: make the pressure obtain a stable state;

[0065] e) Evacuation: evacuate again to make the vacuum state in the tube stable;

[0066] f) Constant temperature: multi-step constant temperature operation (four times), so that the temperature in the tube is controlled and finally reaches a stable state;

[0067] g) Evacuation: Use PD305 machine <80mTorr to evacuate to prepare for pre-deposition;

[0068] h) Pre-deposition: using SiH 4 and NH 3 The silicon wafer is pre-deposited, the coating temperature is 450.0°C, the coating time is 20...

Embodiment 2

[0083] Multi-layer SiN for solar monocrystalline PERC x The back film process includes the following steps:

[0084] a) Nitrogen filling: Nitrogen is filled to keep the furnace tube at atmospheric pressure;

[0085] b) Entering the boat: sending the full furnace of silicon wafers into the PECVD furnace tube;

[0086] c) Evacuation: pump out all the gas in the furnace tube, so that the tube is in a vacuum state;

[0087] d) Constant pressure: make the pressure obtain a stable state;

[0088] e) Evacuation: evacuate again to make the vacuum state in the tube stable;

[0089]f) Constant temperature: multi-step constant temperature operation (four times), so that the temperature in the tube is controlled and finally reaches a stable state;

[0090] g) Evacuation: Use PD305 machine <80mTorr to evacuate to prepare for pre-deposition;

[0091] h) Pre-deposition: using SiH 4 and NH 3 The silicon wafer is pre-deposited, the coating temperature is 460.0°C, the coating time is 20s...

Embodiment 3

[0105] Multi-layer SiN for solar monocrystalline PERC x The back film process includes the following steps:

[0106] a) Nitrogen filling: Nitrogen is filled to keep the furnace tube at atmospheric pressure;

[0107] b) Entering the boat: sending the full furnace of silicon wafers into the PECVD furnace tube;

[0108] c) Evacuation: pump out all the gas in the furnace tube, so that the tube is in a vacuum state;

[0109] d) Constant pressure: make the pressure obtain a stable state;

[0110] e) Evacuation: evacuate again to make the vacuum state in the tube stable;

[0111] f) Constant temperature: multi-step constant temperature operation (four times), so that the temperature in the tube is controlled and finally reaches a stable state;

[0112] g) Evacuation: Use PD305 machine <80mTorr to evacuate to prepare for pre-deposition;

[0113] h) Pre-deposition: using SiH 4 and NH 3 The silicon wafer is pre-deposited, the coating temperature is 430.0°C, the coating time is 20...

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Abstract

The invention relates to a process method for preparing a multilayer SiNx back film by solar single crystal PERC. The method comprises the following steps: (1) vacuumizing a reaction system, and carrying out pre-deposition coating on a back surface of a silicon wafer by adopting SiH4 and NH3 to obtain a pre-deposited silicon wafer; (2) adopting the SiH4 and NH3 to carry out coating deposition on the silicon wafer after the pre-deposition treatment; and (3) repeating the steps (1) and (2) n times to obtain a solar cell, wherein n is greater than or equal to 1. According to the method, a good passivation effect can be obtained by adopting a multilayer SiNx back coating method, so that the conversion efficiency of the single crystal cell is improved; after the multiple layers of antireflection films are used for film coating, the film surface after film coating is more uniform. The processing object can be a mortar silicon wafer or a diamond wire silicon wafer, and the application range is wide.

Description

technical field [0001] The invention belongs to the technical field of solar single crystal cells, in particular to a multi-layer SiN prepared by solar single crystal PERC x Back film process method. Background technique [0002] The optical properties of crystalline silicon materials are the key factors that determine the ultimate efficiency of crystalline silicon solar cells, and are also the basis for the design of solar cell manufacturing processes. Semiconductor materials have an absorption effect on light, so the absorptivity of the material to light should be considered. The anti-reflection film uses the interference principle of light. Two light waves with the same amplitude and the same wave length are superimposed, and the amplitude of the light wave is strengthened as a result. If there are two light waves with the same amplitude and a difference of λ / 2 in the wave length, the two light waves are superimposed and the result cancels each other out. A thin film ...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168H01L31/1804Y02E10/547Y02P70/50
Inventor 雷丽茶赵颖厉文斌
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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