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Nanoimprint photoresist and preparation method thereof

A technology of nanoimprinting and photoresist, which is applied in the direction of optomechanical equipment, photosensitive materials for optomechanical equipment, optics, etc., can solve problems such as graphic defects and damaged templates, and achieve reduced surface energy, simple operation, and improved Effect of release ability

Pending Publication Date: 2020-04-10
CHANGZHOU VOCATIONAL INST OF ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

can end up with graphics defects and even damage to the stencil

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A nanoimprint photoresist, the components of which include: 30 parts of photocurable resin, 30 parts of modified polyurethane resin, 2 parts of surfactant, 0.07 part of nano-silica aerosol, tetrafluoroethylene-perfluoroalkyl 10 parts of vinyl ether copolymer, 1 part of photoinitiator, and 30 parts of solvent; the preparation method of the modified polyurethane resin is as follows: heating the aqueous dispersion of ferrous sulfide and graphite fluoride to 80 ° C, stirring for 2 hours After adding water-based polyurethane acrylate to disperse evenly, evaporate the water to dry. The addition ratio of the ferrous sulfide, graphite fluoride, and water-based polyurethane acrylate is 0.2:0.1:100

[0023] The photocurable resin is epoxy resin vinyl ether. The photoinitiator is 2-phenylbenzyl-2-dimethylamine-1-(4-morpholinebenzylphenyl) butanone. The surfactant is polyetheramine D230. The solvent is ethyl acetate.

[0024] A method for preparing a nanoimprint photoresist, co...

Embodiment 2

[0029] A nanoimprint photoresist, its components include: photocurable resin, modified polyurethane resin, surfactant, nano silicon dioxide aerosol, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, photoinitiated agent, solvent; the preparation method of the modified polyurethane resin is as follows: heat the water dispersion of ferrous sulfide and graphite fluoride to 80°C, stir for 2 hours, add water-based polyurethane acrylate to disperse evenly, and evaporate the water to dryness That is, the addition ratio of the photocurable resin, modified polyurethane resin, and tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer is 30:30:10. The photocurable resin is acrylate. The photoinitiator is 1-hydroxycyclohexylacetophenone. The surfactant is polyetheramine D230. The addition ratio of the ferrous sulfide, graphite fluoride, and water-based polyurethane acrylate is 0.2:0.1:100. The solvent is acetone. The addition ratio of the nano-silica aerosol is 1% of the su...

Embodiment 3

[0035] A nanoimprint photoresist, its components include: photocurable resin, modified polyurethane resin, surfactant, nano silicon dioxide aerosol, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, photoinitiated agent, solvent; the preparation method of the modified polyurethane resin is as follows: heat the water dispersion of ferrous sulfide and graphite fluoride to 80°C, stir for 2 hours, add water-based polyurethane acrylate to disperse evenly, and evaporate the water to dryness That is, the addition ratio of the photocurable resin, modified polyurethane resin, and tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer is 30:30:10. The photocurable resin is methacrylate. The photoinitiator is p-isopropylphenyl-2-hydroxydimethylacetone-1. The surfactant is polyetheramine D2000. The addition ratio of the ferrous sulfide, graphite fluoride, and water-based polyurethane acrylate is 0.2:0.1:100. The solvent is acetone. The addition ratio of the nano-silica aeros...

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PUM

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Abstract

The invention provides a nanoimprint photoresist and a preparation method thereof. The nanoimprint photoresist comprises the following components: light-cured resin, modified polyurethane resin, a surfactant, nano silicon dioxide aerosol, a tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, a photoinitiator and a solvent. The preparation method of the modified polyurethane resin comprises:heating an aqueous dispersion of ferrous sulfide and graphite fluoride to 80 DEG C, stirring for 2 hours, adding waterborne polyurethane acrylate, uniformly dispersing, and volatilizing water, whereinthe addition ratio of the light-cured resin to the modified polyurethane resin to the tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer is 30: 30: 10.

Description

technical field [0001] The invention belongs to the field of glue materials, and in particular relates to a nano-imprint photoresist and a preparation method thereof. Background technique [0002] As a next-generation lithography technology, nanoimprint technology has the advantages of high resolution, high yield, and low cost. Different from traditional photolithography technology, nanoimprint technology directly adopts mechanical imprint method to transfer micro-nano pattern instead of using light to shape photoresist. According to different materials and processes, the commonly used nanoimprint technology can be divided into two types: hot embossing (HEL) and ultraviolet imprinting (UV-NIL). Thermoplastic nanoimprinting (ie hot embossing) specifically uses a thermoplastic material, and when the thermoplastic material is heated above the glass transition temperature, the pattern of the template is transferred to the substrate by pressure. Since the template is in contact...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/027G03F7/004G03F7/00
CPCG03F7/0002G03F7/004G03F7/027
Inventor 李树白姚培张启蒙刘媛周敏茹周海浪杨天宝花佳淋
Owner CHANGZHOU VOCATIONAL INST OF ENG
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