Capacitor structure and manufacturing method thereof

Abstract

The invention provides a capacitor structure and a manufacturing method thereof, and the method comprises the steps: forming an etching stop layer, a lower sacrificial layer, a central supporting layer, a top sacrificial layer, a first supporting layer, and a stress relieving layer on a bottom substrate, wherein the bottom substrate is provided with a contact hole; etching the stress relieving layer based on a first pattern mask to form a stress relieving part; forming a second supporting layer on the first supporting layer and the stress relieving part, wherein the first supporting layer andthe second supporting layer wrap the stress relieving part to form a top supporting layer; etching the top supporting layer based on the second pattern mask to form a primary capacitance hole; forminga lower electrode layer at least on the surface of the inner wall of the primary capacitor hole; etching at least the top supporting layer based on a third pattern mask to form an etching opening; and removing the top sacrificial layer, a portion of the central supporting layer, and the lower sacrificial layer based on the etch opening to form an ultimate capacitance hole. According to the invention, the problem of low stability of the capacitor support layer in the existing capacitor structure is solved.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a capacitor structure and a manufacturing method thereof. Background technique [0002] Dynamic Random Access Memory (DRAM for short) is a semiconductor storage device commonly used in computers, and is composed of many repeated storage units. Each memory cell usually includes a capacitor and a transistor; the gate of the transistor is connected to the word line, the drain is connected to the bit line, and the source is connected to the capacitor; the voltage signal on the word line can control the opening or closing of the transistor, and then through the bit line Read the data information stored in the capacitor, or write the data information into the capacitor through the bit line for storage. [0003] As the device size of dynamic random access memory (DRAM) becomes smaller and smaller, the aspect ratio of capacitors becomes larger and larger, making etching ...

AI Technical Summary

Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a capacitor structure and its manufacturing method, which is used to solve the problem of low stability of the capacitor support layer in the existing capacitor structure

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