High-speed high-linearity silicon-lithium niobate external cavity frequency modulation laser

Abstract

The invention discloses a high-speed and high-linearity silicon-lithium niobate external cavity frequency modulation laser. A reflective semiconductor optical amplifier of the external cavity laser isconnected to a phase shifter through a silicon-based light spot size converter; and then the output end of the phase shifter is connected with the input end of the first micro-ring filter, the outputend of the first micro-ring filter is connected with the input end of the second micro-ring filter, and the output end of the second micro-ring filter is connected with the input end of the reflector. And a lithium niobate film is bonded above the silicon waveguide. According to the invention, a filtering structure is formed through vernier effects of the two micro-ring filters, and laser with awide tuning range and a narrow line width can be obtained. By utilizing the advantages of low loss, strong linear electro-optic effect and high modulation speed of the lithium niobate film, the line width of the laser can be further compressed, the output laser power is improved, and high-speed linear frequency modulation is realized.

Description

technical field [0001] The invention relates to a frequency modulation laser, in particular to a high-speed and high-linear silicon-lithium niobate external cavity frequency modulation laser. Background technique [0002] Since the development of silicon photonics technology, many breakthroughs and achievements have been made in optoelectronic devices such as light sources, modulators, waveguides, and detectors. Silicon-based materials have low cost and good ductility, and can be used to manufacture optical devices using mature silicon CMOS technology, which is convenient for integration with other existing components. At the same time, the silicon waveguide has excellent optical transmission performance and is transparent to the 1.1-1.6um communication band, which opens another door for future high-speed and large-capacity communication. [0003] On the existing processing platform, the loss of silicon waveguide is 2-3dB / cm, which is limited by the center-symmetric lattice...

AI Technical Summary

Problems solved by technology

But conventional lithium niobate modulators are formed by low-index-contrast waveguides with weak optical confinement, which makes the optical modes not well confined in lithium niobate waveguides, and the microwave electrodes must be placed away from the optical modes. In order to reduce the absorption loss as much as possible, the thickness of the cladding layer must be increased, which leads to the excessive volume of the lithium niobate modulator and also increases the driving voltage. In order to reduce the modulation voltage, the length of the modulation arm has to be increased, which makes The device volume is larger, and the modulation efficiency cannot be better improved

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